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Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfaces

机译:空气暴露的Si(0 0 1)表面上取向Ag纳米晶的生长

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摘要

Growth of Ag islands under ultrahigh vacuum condition on air-exposed Si(0 0 1)-(2 × 1) surfaces has been investigated by in-situ reflection high energy electron diffraction (RHEED). A thin oxide is formed on Si via exposure of the clean Si(0 0 1 )-(2 × 1) surface to air. Deposition of Ag on this oxidized surface was carried out at different substrate temperatures. Deposition at room temperature leads to the growth of randomly oriented Ag islands while well-oriented Ag islands, with (0 0 1)_(Ag)||(0 0 1 )_(Si), [1 1 0]_(ag)||[1 1 0]_(Si), have been found to grow at substrate temperatures of >350℃ in spite of the presence of the oxide layer between Ag islands and Si. The RHEED patterns show similarities with the case of Ag deposition on H-passivated Si(0 0 1) surfaces.
机译:通过原位反射高能电子衍射(RHEED)研究了超高真空条件下暴露于空气的Si(0 0 1)-(2×1)表面上Ag岛的生长。通过将干净的Si(0 0 1)-(2×1)表面暴露在空气中,在Si上形成薄氧化物。在不同的基板温度下在该氧化表面上沉积Ag。在室温下沉积会导致取向随机的Ag岛的生长,而取向良好的Ag岛的生长则为(0 0 1)_(Ag)|||(0 0 1)_(Si),[1 1 0] _(ag )|| [1 1 0] _(Si),尽管在银岛和Si之间存在氧化物层,但在> 350℃的衬底温度下仍会生长。 RHEED图案与在H钝化的Si(0 0 1)表面上沉积Ag的情况相似。

著录项

  • 来源
    《Applied Surface Science》 |2009年第2期|361-364|共4页
  • 作者单位

    Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India;

    Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India Max-Planck Institute for Microstructure Physics. Weinberg 2. D-06120 Halle. Germany;

    Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India;

    Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ag islands on oxidized si surfaces; reflection high energy electron diffraction;

    机译:在氧化的硅表面上有ag岛;反射高能电子衍射;

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