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首页> 外文期刊>Applied Surface Science >Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures
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Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures

机译：通过光电子显微镜观察离子注入纳米结构中的扩散系数

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摘要

We have fabricated parallel stripes of nanostructures in an n-type Si substrate by implanting 30 keV Ga~+ ions from a focused ion beam (FIB) source. Two sets of implantation were carried out. In one case, during implantation the substrate was held at room temperature and in the other case at 400 ℃. Photoemission electron microscopy (PEEM) was carried out on these samples. The implanted parallel stripes, each with a nominal dimension of 4000 nm × 100 nm, appear as bright regions in the PEEM image. Line scans of the intensities from the PEEM image were recorded along and across these stripes. The intensity profile at the edges of a line scan is broader for the implantation carried out at 400 ℃ compared to room temperature. From the analysis of this intensity profile, the lateral diffusion coefficient of Ga in silicon was estimated assuming that the PEEM intensity is proportional to Ga concentration. The diffusion coefficient at 400 ℃ has been estimated to be ～1.3 × 10~(-15) m~2/s. Across the stripes an asymmetric diffusion profile has been observed, which has been related to the sequence of implantation of these stripes and the associated defect distribution due to lateral straggling of the implanted ions.
机译：我们通过从聚焦离子束（FIB）源注入30 keV Ga〜+离子，在n型硅衬底中制造了平行的纳米结构条纹。进行两组植入。在一种情况下，在植入过程中将衬底保持在室温下，而在另一种情况下，将衬底保持在400℃下。在这些样品上进行了光电子显微镜（PEEM）。标称尺寸为4000 nm×100 nm的已植入平行条纹在PEEM图像中显示为亮区。沿着这些条纹并跨越这些条纹记录了来自PEEM图像的强度的线扫描。与室温相比，在400℃下进行的线扫描边缘处的强度分布更宽。通过对该强度分布图的分析，假设PEEM强度与Ga浓度成正比，可以估算出Ga在硅中的横向扩散系数。据估计，在400℃时的扩散系数为〜1.3×10〜（-15）m〜2 / s。在条带上观察到不对称的扩散分布，这与这些条带的注入顺序以及由于注入离子的横向散布引起的相关缺陷分布有关。

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  • 来源
    《Applied Surface Science》 |2009年第2期|536-540|共5页
  • 作者

    R. Batabyal; S. Patra; A. Roy; S. Roy; L. Bischoff; B.N. Dev;

  • 作者单位

    Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India;

    Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India;

    Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India;

    Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India;

    Research Centre Dresden-Rossendorf, PF 51 01 19, 01314 Dresden, Germany;

    Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India;

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  • 正文语种 eng
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  • 关键词

    photoemission electron microscopy; nanostructures fabricated by focused ion beam; diffusion in nanostructures;

    机译：光电子显微镜聚焦离子束制备的纳米结构;纳米结构中的扩散;

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