首页> 外文期刊>Applied Surface Science >Observation of new critical point in In_xAl_(1-x)As alloy using spectroscopic ellipsometry
【24h】

Observation of new critical point in In_xAl_(1-x)As alloy using spectroscopic ellipsometry

机译:椭圆偏振光谱法观察In_xAl_(1-x)As合金的新临界点

获取原文
获取原文并翻译 | 示例
           

摘要

Using a spectroscopic ellipsometry, pseudodielectric functions <ε> of In_xAl_(1-x)As ternary alloy films (x = 0.43, 0.62, 0.75, and 1.00) from 0.74 to 6.48 eV were determined. Fast in-situ chemical etching to effectively remove surface overlayers using charge-coupled device detector and to avoid the reoxidation of the surface of films prior to the ellipsometric spectrum measurement was performed. At the high energy region, an additional critical point structure which is interpreted as the E'_1 transition from the band structure calculation of the linear augmented Slater-type orbital method was reported.
机译:使用椭圆偏振光谱法,确定In_xAl_(1-x)As三元合金膜(x = 0.43、0.62、0.75和1.00)的伪介电函数<ε>为0.74至6.48 eV。快速进行原位化学蚀刻,以使用电荷耦合器件检测器有效去除表面覆盖层,并避免在椭圆光谱测量之前避免膜表面再次氧化。在高能区,据报道从线性增强的Slater型轨道方法的能带结构计算中可以解释为E'_1跃迁的附加临界点结构。

著录项

  • 来源
    《Applied Surface Science》 |2009年第4期|1031-1034|共4页
  • 作者单位

    Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea;

    Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea;

    Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea;

    Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea;

    Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea;

    Department of Physics, University of Illinois at Urbana-Champaign, Urbana-Champaign, IL 61801, USA;

    Department of Physics, University of Illinois at Urbana-Champaign, Urbana-Champaign, IL 61801, USA Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan;

    Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 146-791, Republic of Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ellipsometry; InAlAs; dielectric function; band calculation; LASTO;

    机译:椭圆仪InAlAs;介电功能频带计算;拉斯托;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号