Electronic structure of dysprosium silicide films grown on a Si(111) surface

Ayako Imai; Haruya Kakuta; Kenji Mawatari; Ayumi Harasawa; Nobuo Ueno; Taichi Okuda; Kazuyuki Sakamoto

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Electronic structure of dysprosium silicide films grown on a Si(111) surface

机译：Si（111）表面生长的硅化薄膜的电子结构

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The thickness-dependent electronic structures of Dy silicide films grown on a Si(111) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five (3~(1/2) × 3~(1/2)) periodic bands have been observed in thicker films. Taking the (2(3~(1/2)) × 2(3~(1/2))) periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1 × 1) structure. Of the (3~(1/2) × 3~(1/2)) periodic bands observed in thick films, four of them are well explained by the folding of the (1 × 1) bands into a (3~(1/2) × 3~(1/2)) periodicity. Regarding the other band, the three (3~(1/2) × 3~(1/2)) periodic bands would originate from the electronic states related to the inner Si layers that form a (3~(1/2) × 3~(1/2)) structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.

机译：通过角度分辨光电子能谱研究了生长在Si（111）表面上的Dy硅化物膜的厚度依赖的电子结构。在由1.0单层及以下的Dy覆盖形成的硅化物膜中观察到两个（1×1）周期带，都跨越费米能级，并且超过五个（3〜（1/2）×3〜（ 1/2））在较厚的薄膜中观察到周期性带。考虑到亚单层硅化物膜中Dy原子的（2（3〜（1/2））×2（3〜（1/2）））周期性结构，两个金属带的周期性表明它们主要是由于来自形成（1×1）结构的Si原子的轨道。在厚膜中观察到的（3〜（1/2）×3〜（1/2））周期带中，其中的四个通过将（1×1）带折叠成（3〜（1 / 2）×3〜（1/2））周期。关于另一个能带，三个（3〜（1/2）×3〜（1/2））周期性能带起源于与形成（3〜（1/2）× 3〜（1/2））结构，而仅在3.0 ML膜中观察到的一种结构可能源自位于体硅与Dy硅化物膜之间界面的电子。

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来源
《Applied Surface Science》 |2009年第4期|1156-1159|共4页
作者
Ayako Imai; Haruya Kakuta; Kenji Mawatari; Ayumi Harasawa; Nobuo Ueno; Taichi Okuda; Kazuyuki Sakamoto;
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作者单位

Graduate School of Science and Technology, Chiba University, Chiba 263-8522, Japan;

Graduate School of Science and Technology, Chiba University, Chiba 263-8522, Japan;

Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan;

The Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan;

Graduate School of Advanced Integration Science, Chiba University, Yayoi-cho 1-33, Inage-ku, Chiba 263-8522, Japan;

The Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan;

Graduate School of Advanced Integration Science, Chiba University, Yayoi-cho 1-33, Inage-ku, Chiba 263-8522, Japan;

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正文语种 eng
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electronic structure; rare-earth silicide; angle-resolved photoelectron spectroscopy; low-energy electron diffraction;

机译：电子结构稀土硅化物角分辨光电子能谱低能电子衍射;

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1. SURFACE ATOMIC STRUCTURE OF EPITAXIALLY GROWN ERBIUM SILICIDE FILMS ON SI(111)7X7 [J] . Martingago JA., Veuillen JY., Gomezrodriguez JM. Physical Review, B. Condensed Matter . 1997,第8期

机译：SI（111）7X7上表观生长的硅化RB薄膜的表面原子结构
2. Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111) [J] . C. Rogero, C. Koitzsch, M. E. Gonzalez, Physical Review. B, Condensed Matter . 2004,第4期

机译：Si（111）外延生长的二维稀土硅化物的电子结构和费米表面
3. Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces [J] . M. C. Zeman, R. J. Nemanich, A. Sunda-Meya Journal of Materials Science . 2014,第4期

机译：Si（001）和（111）表面上硅化纳米结构的动力学
4. Formation, optical properties and electronic structure of thin Yb silicide films on Si(111) [C] . N.G. Galkin, A.M. Maslov, V.O. Polyarnyi Conference on Fundamental Problems of Optoelectronics and Microelectronics . 2005

机译：Si（111）上薄YB硅化物膜的形成，光学性质和电子结构
5. ATOMIC AND ELECTRONIC STRUCTURE OF ULTRATHIN IRON FILMS ON Si(111) AND MgO(001) SURFACES [D] . Urano, Toshio 1987

机译：Si（111）和MgO（001）表面上超薄铁膜的原子和电子结构
6. Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature [O] . Jiagui Feng, Sean R. Wagner, Pengpeng Zhang -1

机译：Ag（111）表面上高温生长的二维硅的界面耦合和电子结构
7. Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111) [O] . Rogero, C., Koitzsch, Christian, González, M. E., 2008

机译：Si（111）外延生长的二维稀土硅化物的电子结构和费米表面
8. RHEED studies of vicinal Si(111) surfaces and Ag films grown on Si(111) [R] . Stanley, M. K. 1998

机译：在si（111）上生长的邻近si（111）表面和ag薄膜的RHEED研究

Electronic structure of dysprosium silicide films grown on a Si(111) surface

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