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Ultraviolet Emission Properties Of Zno Film With Zinc Deficiency By Ss Cvd

机译:Ss Cvd锌缺乏锌合金薄膜的紫外发射特性

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A-b axis orientation ZnO film on silicon (100) substrate has been prepared by a single source chemical vapor deposition technique. X-ray photoelectron spectroscopy results revealed that the film was very close to stoichiometry but with a small amount of zinc deficiency. Temperature-dependent (10-300 K) ultraviolet photoluminescence of the film was presented. Comparing the photon energy separation of the several groups in the near band edge ultraviolet luminescence bands, as well as the variation of the relative intensities and the shift of the luminescence lines at different temperatures, free-, bound-exciton and its assisted phonon emission were observed, which corresponded to the mechanism of the ultraviolet emission properties. A strong ultraviolet emission resulting from the recombination of free-exciton was observed at 300 K photoluminescence spectrum examined in atmosphere environment. Contrasted to the relatively weak ultraviolet emission of the film in vacuum, atmosphere environment was found to be an important contribution to the strong ultraviolet emission of the film.
机译:已经通过单源化学气相沉积技术制备了在硅(100)衬底上的A-b轴取向ZnO膜。 X射线光电子能谱结果表明该膜非常接近化学计量,但锌缺乏量很少。提出了膜的温度依赖性(10-300 K)紫外光致发光。比较了近波段边缘紫外发光带中几组的光子能量分离,以及在不同温度下相对强度的变化和发光线的移动,自由,束缚激子及其辅助声子发射分别为观察到,这对应于紫外线发射特性的机理。在大气环境下检测的300 K光致发光光谱中观察到了由于自由激子​​复合而产生的强紫外线发射。与真空中薄膜相对较弱的紫外线发射相反,发现大气环境对薄膜的强烈紫外线发射有重要贡献。

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