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Structure, Morphology And Optical Properties Of Sio_(2-x) Thin Films Prepared By Plasma-assisted Pulsed Laser Deposition

机译:等离子体辅助脉冲激光沉积制备Sio_(2-x)薄膜的结构,形貌和光学性质

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摘要

The amorphous silicon oxide SiO_(2-x) thin films were prepared by the plasma-assisted pulsed laser deposition (PLD) method. X-ray diffraction spectrometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-VIS-NIR scanning spectrophotometry and ellipsometry were used to characterize the crystallinity, microscopic morphology and optical properties of obtained thin films. The influences of substrate temperatures, oxygen partial pressures and oxygen plasma assistance on the compositions of silicon oxide (SiO_(2-x)) thin films were investigated. Results show that the deposited thin films are amorphous and have high surface quality. Stoichiometric silicon dioxide (SiO_2) thin film can be obtained at elevated temperature of 200 ℃ in an oxygen plasma-assisted atmosphere. Using normal incidence transmittance, a novel and simple method has been proposed to evaluate the value of x in transparent SiO_(2-x) thin films on a non-absorbing flat substrate.
机译:通过等离子体辅助脉冲激光沉积(PLD)方法制备了非晶氧化硅SiO_(2-x)薄膜。使用X射线衍射光谱法(XRD),扫描电子显微镜(SEM),原子力显微镜(AFM),UV-VIS-NIR扫描分光光度法和椭圆光度法表征了所得薄膜的结晶度,显微形态和光学性质。研究了衬底温度,氧分压和氧等离子体辅助对氧化硅(SiO_(2-x))薄膜组成的影响。结果表明,所沉积的薄膜是无定形的并且具有较高的表面质量。化学计量的二氧化硅(SiO_2)薄膜可以在氧等离子体辅助的气氛中于200℃的高温下获得。使用法向入射透射率,已经提出了一种新颖且简单的方法来评估非吸收性平坦基板上的透明SiO_(2-x)薄膜中x的值。

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