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Effects Of Depositing Temperatures On Structure And Optical Properties Of Tio_2 Film Deposited By Ion Beam Assisted Electron Beam Evaporation

机译:沉积温度对离子束辅助电子束蒸发沉积Tio_2薄膜结构和光学性能的影响

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摘要

TiO_2, which is high in refractive index and dielectric constant, plays an important role in the fields of optics and electronics. In this work, TiO_2 films were prepared on glass substrates by the technique of ion beam assisted electron beam evaporation. The films were deposited at 50, 150 and 300 ℃, respectively. Then the as-deposited TiO_2 films were annealed at 450 ℃ for 1 h in vacuum atmosphere. Structures and optical properties of TiO_2 films were characterized by XRD, SEM, ellipsometry and spectrophotometer. As a result, the structure and the refractive index of films were improved by both the annealing and the increasing of the deposition temperature. The UV-vis transmittance spectra also confirmed that the deposition temperature has a significant effect on the transparency of the thin films. The highest transparency over the visible wavelength region of spectra was obtained at the deposition temperature of 300 ℃. The allowed direct band gap at the deposition temperature ranging from 50 to 300 ℃ was estimated to be in the range from 3.81 to 3.92 eV.
机译:折射率高且介电常数高的TiO_2在光学和电子领域中起着重要的作用。本文采用离子束辅助电子束蒸发技术在玻璃基板上制备了TiO_2薄膜。薄膜分别在50、150和300℃下沉积。然后将沉积的TiO_2薄膜在真空气氛中于450℃退火1小时。用XRD,SEM,椭圆光度法和分光光度计对TiO_2薄膜的结构和光学性能进行了表征。结果,通过退火和沉积温度的提高,膜的结构和折射率得到改善。紫外可见透射光谱也证实了沉积温度对薄膜的透明性有显着影响。在300℃的沉积温度下,在光谱的可见光波长范围内具有最高的透明度。在沉积温度为50到300℃的情况下,允许的直接带隙估计为3.81到3.92 eV。

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