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首页> 外文期刊>Applied Surface Science >Two-dimensional Dopant Profiling Of Silicon With Submicron Resolution Using Near Field Optics On Silicon/electrolyte Contacts
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Two-dimensional Dopant Profiling Of Silicon With Submicron Resolution Using Near Field Optics On Silicon/electrolyte Contacts

机译：在硅/电解质触点上使用近场光学器件对亚微米分辨率的硅进行二维掺杂物轮廓分析

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摘要

We demonstrate the possibility to use near field optics to perform two-dimensional dopant profiling on silicon surface, with deep submicron spatial resolution. The sample surface is contacted by an aqueous electrolyte giving a reverse biased junction that is illuminated by a subwavelength optical source, in near filed conditions. A staircase calibration structure was used with several boron-doped layers with either 4 μm or 0.4 μm thickness and doping between 10~(17) and 10~(20) at/cm~3. Measurements were performed on the sample cross section. It is shown that photocurrent surface mapping shows up the doped areas with a lateral resolution better than 100 nm.
机译：我们证明了使用近场光学器件在硅表面上执行二维掺杂物轮廓分析的可能性，具有深亚微米的空间分辨率。样品表面与水性电解质接触，从而在近场条件下产生反向偏置的结，该结由亚波长光源照亮。使用阶梯校准结构，其具有几个厚度为4μm或0.4μm的硼掺杂层，掺杂浓度在10〜（17）和10〜（20）at / cm〜3之间。在样品横截面上进行测量。结果表明，光电流表面测绘显示出掺杂区，其横向分辨率优于100 nm。

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