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首页> 外文期刊>Applied Surface Science >Quantum Size Effect Of Electron Density In Ultra-thin Metal Films And Its Influence On The Interlayer Relaxation
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Quantum Size Effect Of Electron Density In Ultra-thin Metal Films And Its Influence On The Interlayer Relaxation

机译：超薄金属膜中电子密度的量子尺寸效应及其对层间弛豫的影响

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摘要

Further minimization of electronic devices and tnicroelectromechanical systems (MEMS) requires the feature sizes of relevant materials to be shrunk significantly. In such a case, boundary effects, such as interfaces and surfaces, become remarkable, especially in nanometer scale, which must affect their microstructures and properties. In this work, we have analyzed the distribution of electron charge density in Cu and Al ultra-thin films using free electron model. The results show that an electrostatic field may come into being due to quantum size effect, and the interlayer separations must relax to decrease the Coulomb energy, the thinner the films, the larger the relaxation. More interestingly, two opposite deviating directions of the center of negative charges result in two absolutely distinct interlayer relaxations: inwards for Cu and outwards for Al.
机译：电子设备和微机电系统（MEMS）的进一步最小化要求相关材料的特征尺寸显着缩小。在这种情况下，边界效应（例如界面和表面）变得非常明显，尤其是在纳米级，这必须影响其微观结构和性能。在这项工作中，我们使用自由电子模型分析了Cu和Al超薄薄膜中电子电荷密度的分布。结果表明，可能由于量子尺寸效应而产生静电场，并且层间间隔必须松弛以减小库仑能量，膜越薄，松弛越大。更有趣的是，负电荷中心的两个相反的偏离方向导致两个绝对不同的层间弛豫：Cu向内和Al向外。

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