• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Oxidation Mechanism Of Hydrogen-terminated Ge(100) Surface
【24h】

Oxidation Mechanism Of Hydrogen-terminated Ge(100) Surface

机译：氢封端的Ge（100）表面的氧化机理

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Control of the surface chemistry to prepare a robust termination on the Ge surface is crucial for the development of high-end Ge devices. In this study, oxidation of a H-terminated Ge surface was studied in air ambient and H_2O using a multiple internal reflection Fourier transform infrared spectroscopy (MIR FT-IR) technique. Ge surface treated in less diluted HF exhibited a stronger Ge-H peak intensity, and the surface was easily oxidized in the air ambient. Therefore, it is believed that the treatment of the Ge surface in highly diluted HF solution has an advantage in suppressing the oxidation of Ge in the air ambient. For the oxidation of Ge(l 0 0) surface in air ambient, the Ge surface is attacked by oxidizing agents to break Ge-H and Ge-Ge bonds, and the transition GeO_x layer is first formed, followed by a layer-by-layer GeO_2 formation with the increase in exposure time. When the H-terminated Ge surface was treated in H_2O, GeO_x was mainly formed, the thickness of the oxide layer was not changed with an increase in treatment time, and the Ge surface was maintained in a suboxide state, which exhibits a different oxidation mechanism from that in air ambient.
机译：控制表面化学成分以在Ge表面制备牢固的终端对于高端Ge器件的开发至关重要。在这项研究中，使用多重内反射傅里叶变换红外光谱（MIR FT-IR）技术研究了在空气环境和H_2O中H端接的Ge表面的氧化。用较少稀释的HF处理的Ge表面表现出较强的Ge-H峰强度，并且该表面在空气环境中容易被氧化。因此，据信在高度稀释的HF溶液中对Ge表面的处理在抑制空气环境中Ge的氧化方面具有优势。为了在空气环境中氧化Ge（l 0 0）表面，Ge表面会受到氧化剂的攻击而破坏Ge-H和Ge-Ge键，然后首先形成过渡GeO_x层，然后逐层形成层GeO_2的形成随着暴露时间的增加而增加。当在H_2O中处理了H端接的Ge表面时，主要形成GeO_x，随着处理时间的增加，氧化层的厚度不变，并且Ge表面保持在亚氧化态，这表现出不同的氧化机理从空气中的那个。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号