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首页> 外文期刊>Applied Surface Science >Study Of Photoexcited Plasma In P-doped Gaas Beveled Structures By Micro-raman Spectroscopy
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Study Of Photoexcited Plasma In P-doped Gaas Beveled Structures By Micro-raman Spectroscopy

机译：微喇曼光谱研究P掺杂Gaas斜面结构中的光激发等离子体

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摘要

The generation and properties of photoexcited steady-state plasma of electrons and holes in bevel-shaped p-type GaAs structures were studied by micro-Raman spectroscopy. The best correspondence of theoretical calculations with experimental spectra was obtained by using of photoexcited carrier concentration of 1.1 × 10~(17) cm~(-3) and mobility 600 and 40 cm~2/V s for the photoexcited steady-state electrons and holes, respectively. The analysis of the plasma behavior and its coupling with longitudinal optical phonons at different positions along the bevel shows that the mode resulting from this coupling causes the changes of Raman intensities recorded in frequency positions of transversal (TO) and longitudinal (LO) optical phonon peaks. These changes were further studied and physical interpretation was provided. The dependence of their ratio in the region affected by surface depletion layer can be fitted by linear function very well. The linearity was observed at all studied structures. This behavior on beveled structures prepared by special treatment with very low bevel angle can be used for analysis of the p-type GaAs nanostractures, particularly for measurement and extraction of a doping profile of p-type impurities in GaAs with very high resolution in nm scale.
机译：通过微拉曼光谱研究了锥状p型GaAs结构中电子和空穴的光激发稳态等离子体的产生和性质。理论上的计算与实验光谱的最佳对应关系是通过使用1.1×10〜（17）cm〜（-3）的光激发载流子浓度和600和40 cm〜2 / V s的迁移率来获得的。孔。对等离子体行为及其在沿斜角的不同位置处与纵向光学声子的耦合的分析表明，这种耦合所产生的模式导致记录在横向（TO）和纵向（LO）光学声子峰的频率位置中的拉曼强度发生变化。 。对这些变化进行了进一步研究，并提供了物理解释。它们在受表面耗尽层影响的区域中的比率的依赖性可以很好地通过线性函数拟合。在所有研究的结构上均观察到线性。通过对具有极低斜角的特殊处理制备的斜角结构的这种行为可用于分析p型GaAs纳米结构，特别是用于测量和提取GaAs中p型杂质的掺杂分布，其纳米级分辨率非常高。

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