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Preparation And Surface Modification Of Silicon Nanowires Under Normal Conditions

机译：正常条件下硅纳米线的制备与表面改性

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摘要

Preparation and surface modification of silicon nanowires (SiNWs) grown by the metal catalyzed solution method under normal conditions (room temperature, 1 atm) had been studied in this paper. Firstly, SiNWs using a simple solution method via electroless metal deposition (EMD) of silver under room temperature, standard pressure had been prepared. The influence of the growth parameters such as solution concentration, etching time on the SiNWs formation had been studied. Secondly, the surface modification of SiNWs with platinum and copper had been investigated. The results indicated that the SiNWs modified with Pt and Cu showed different surface morphologies. Pt modification on SiNWs presented in the form of nanoparticles, whereas Cu modification in the form of membrane. Therefore, the Pt modified SiNWs have more vast surface-to-bulk ratio than the unmodified ones, and SiNWs modified with copper nanoparticles will lead to the smaller surface-to-bulk ratio. So the platinum-modified SiNWs have a promising application in sensors' field.
机译：本文研究了在正常条件下（室温，1 atm）通过金属催化溶液法生长的硅纳米线（SiNWs）的制备和表面改性。首先，通过简单的溶液方法，通过在室温，标准压力下银的化学镀银（EMD）制备了SiNW。研究了溶液浓度，刻蚀时间等生长参数对SiNWs形成的影响。其次，研究了用铂和铜对SiNWs进行表面改性。结果表明，Pt和Cu修饰的SiNWs具有不同的表面形貌。 SiNWs上的Pt修饰以纳米颗粒形式出现，而Cu修饰以膜形式出现。因此，Pt修饰的SiNW比未修饰的SiNW具有更大的表面-本体比，并且用铜纳米粒子修饰的SiNWs将导致较小的表面-本体比。因此，铂修饰的SiNW在传感器领域具有广阔的应用前景。

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