• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Comparison And Semiconductor Properties Of Nitrogen Doped Carbon Thin Films Grown By Different Techniques
【24h】

Comparison And Semiconductor Properties Of Nitrogen Doped Carbon Thin Films Grown By Different Techniques

机译：不同工艺生长的氮掺杂碳薄膜的比较及半导体性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Amorphous carbon nitride (a-CN_x) thin films have been synthesised by three different deposition techniques in an Ar/N_2 gas mixture and have been deposited by varying the percentage of nitrogen gas in the mixture (i.e. the N_2/Ar + N_2 ratio) from 0 to 10%. The variation of the electrical conductivity and the gap values of the deposited films versus the N_2/Ar + N_2 ratio were investigated in relation with their local microstructure. Film composition was analysed using Raman spectroscopy and optical transmission experiments. The observed variation of electrical conductivity and optical properties are attributed to the changes in the atomic bonding structures, which were induced by N incorporation, increasing both the sp~2 carbon content and their relative disorder. The low N content samples seem to be an interesting material to produce films with interesting properties for optoelectronic applications considering the facility to control the gas composition as a key parameter.
机译：已经通过三种不同的沉积技术在Ar / N_2气体混合物中合成了非晶氮化碳（a-CN_x）薄膜，并通过改变混合物中氮气的百分比（即N_2 / Ar + N_2比率）来沉积0至10％。研究了沉积膜的电导率和间隙值随N_2 / Ar + N_2比的变化及其局部微观结构。使用拉曼光谱和光学透射实验分析膜组成。观察到的电导率和光学特性的变化归因于原子键合结构的变化，这种变化是由于氮的掺入引起的，sp_2碳含量及其相对无序度均增加。考虑到控制气体成分的关键参数，低N含量的样品似乎是生产具有有趣性能的薄膜的有趣材料，可用于光电应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号