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Studies on growth and characterization of ternary CdS_(1-x)Se_x alloy thin films deposited by chemical bath deposition technique

机译:化学浴沉积技术沉积CdS_(1-x)Se_x三元合金薄膜的生长和表征

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摘要

Ternary alloyed CdS_(1-x)Se_x thin films of variable composition 'x' were grown by the simple and economical chemical bath deposition technique. The as-grown thin films were characterized for structural, compositional, surface morphological, optical and electrical studies. The X-ray diffraction (XRD) patterns of the sample indicated that all the samples were polycrystalline in nature with hexagonal structure. Scanning electron microscopy (SEM) micrographs showed uniform morphology with spherical shaped grains distributed over entire glass substrate. EDAX studies confirmed that the CdS_(1-x)Se_x films were having approximately same stoichiometry initially as well as finally. Room temperature optical measurements showed that band gap engineering could be realized in CdS_(1-x)Se_x thin films via modulation in composition 'x' Electrical resistivity of CdS_(1-x)Se_x thin films for various compositions was found to be low. The broad and fine tunable band gap properties of ternary CdS_(1-x)Se_x thin films have potential applications in opto-electronic devices.
机译:通过简单且经济的化学浴沉积技术,生长了可变成分“ x”的三元合金化CdS_(1-x)Se_x薄膜。所生长的薄膜用于结构,组成,表面形态,光学和电学研究。样品的X射线衍射(XRD)图谱表明,所有样品本质上都是具有六方结构的多晶。扫描电子显微镜(SEM)显微照片显示出均匀的形态,球形颗粒分布在整个玻璃基板上。 EDAX研究证实,CdS_(1-x)Se_x薄膜的最初和最终化学计量基本相同。室温光学测量表明,通过调制组​​分“ x”可以在CdS_(1-x)Se_x薄膜中实现带隙工程设计。发现各种组分的CdS_(1-x)Se_x薄膜的电阻率都很低。三元CdS_(1-x)Se_x薄膜的宽且精细的可调谐带隙特性在光电器件中具有潜在的应用。

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