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首页> 外文期刊>Applied Surface Science >Field emission property of copper nitride thin film deposited by reactive magnetron sputtering
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Field emission property of copper nitride thin film deposited by reactive magnetron sputtering

机译：反应磁控溅射沉积氮化铜薄膜的场发射特性

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Copper nitride (Cu_3N) thin film was deposited on silicon (Si) substrate by reactive magnetron sputtering method. X-ray diffraction measurement showed that the film was composed of Cu_3N crystallites with anti-ReO_3 structure and exhibited preferential orientation of [100] direction. The field emission (FE) result showed that Cu_3N film had a turn-on electric field of about 3 V/ μm at a current density of 1 μA/cm~2 and a current density of 700 μA/cm~2 was obtained at the electric field of 24 V/μm. The emission mechanism inferred by Fowler-Nordheim (FN) plot is shown as following: thermal electron emission at low field region and tunneling electron emission at high field region.
机译：通过反应磁控溅射法在硅（Si）衬底上沉积氮化铜（Cu_3N）薄膜。 X射线衍射测量表明该膜由具有抗ReO_3结构的Cu_3N微晶组成，并表现出[100]方向的优先取向。场发射（FE）结果表明，Cu_3N薄膜在1μA/ cm〜2的电流密度下具有约3 V /μm的导通电场，并且在700μA/ cm〜2的电流密度下获得了700μA/ cm〜2的电流密度。电场为24 V /μm。由Fowler-Nordheim（FN）图推断的发射机理如下：低场区的热电子发射和高场区的隧道电子发射。

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