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Characteristics improvement of HfO_2/Ge gate stack structure by fluorine treatment of germanium surface

机译：锗表面的氟处理改善了HfO_2 / Ge栅叠层结构的性能

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Chemical reactivity of fluorine molecule (F_2)-germanium (Ge) surface and dissociation of fluorine (F)-Ge bonding have been simulated by semi-empirical molecular orbital method theoretically, which shows that F on Ge surface is more stable compared to hydrogen. Ge MIS (metal insulator semiconductor) capacitor has been fabricated by using F_2-treated Ge(100) substrate and HfO_2 film deposited by photo-assisted MOCVD. Interface state density observed as a hump in the C-Vcurve of HfO_2/Ge gate stack and its C-V hysteresis were decreased by F_2-treatment of Ge surface. XPS (X-ray photoelectron spectroscopy) depth profiling reveals that interfacial layer between HfO_2 and Ge is sub-oxide layer (GeO_x or HfGeO_x), which is believed to be origin of interface state density. F was incorporated into interfacial layer easily by using F_2-treated Ge substrate. These results suggest that interface defect of HfO_2/Ge gate stack structure could be passivated by F effectively.
机译：理论上通过半经验分子轨道方法模拟了氟分子（F_2）-锗（Ge）表面的化学反应性和氟（F）-Ge键的解离，表明与氢相比，Ge表面的F更稳定。通过使用F_2处理的Ge（100）衬底和通过光辅助MOCVD沉积的HfO_2膜来制造Ge MIS（金属绝缘体半导体）电容器。通过Ge表面的F_2处理，降低了HfO_2 / Ge栅堆叠的C-V曲线中的驼峰界面态密度及其C-V磁滞现象。 XPS（X射线光电子能谱）深度剖析表明，HfO_2和Ge之间的界面层是次氧化物层（GeO_x或HfGeO_x），据信这是界面态密度的起源。通过使用经F_2处理的Ge基板，可以容易地将F掺入界面层中。这些结果表明H可以有效地钝化HfO_2 / Ge栅堆叠结构的界面缺陷。

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