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首页> 外文期刊>Applied Surface Science >Effect of Ge surface termination on oxidation behavior
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Effect of Ge surface termination on oxidation behavior

机译：Ge表面终止对氧化行为的影响

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Sulfur-termination was formed on the Ge(100) surface using (NH_4)_2S solution. Formation of Ge-S and the oxidation of the S-terminated Ge surface were monitored with multiple internal reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. In the 0.5, 5, or 20% (NH_4)_2S solution, H-termination on the Ge(100) surface was substituted with S-termination in 1 min. When the S-terminated Ge(100) surface was exposed in air ambient, the oxidation was retarded for about 3600 min. The preservation time of the oxide layer up to one monolayer of S-terminated Ge(100) surface was about 120 times longer than for the H-terminated Ge(100) surface. However, the oxidation of S-terminated Ge(100) surface drastically increased after the threshold time. There was no significant difference in threshold time between S-terminations formed in 0.5,5, and 20% (NH_4)_2S solutions. With the surface oxidation, desorption of S on the Ge surface was observed. The desorption behavior of sulfur on the S-terminated Ge(100) surface was independent of the concentration of the (NH_4)_2S solution that forms S-termination. Non-ideal S-termination on Ge surfaces may be related to drastic oxidation of the Ge surface. Finally, with the desulfurization on the S-terminated Ge(100) surface, oxide growth is accelerated.
机译：使用（NH_4）_2S溶液在Ge（100）表面形成了硫终止反应。用多次内反射傅里叶变换红外光谱和X射线光电子能谱监测Ge-S的形成和S端接的Ge表面的氧化。在0.5％，5％或20％（NH_4）_2S溶液中，Ge（100）表面上的H终止在1分钟内被S终止取代。当S端接的Ge（100）表面暴露在空气环境中时，氧化被延迟了大约3600分钟。直至S端接Ge（100）表面单层的氧化物层的保存时间比H端接Ge（100）表面的保存时间长约120倍。但是，阈值时间后，S端Ge（100）表面的氧化急剧增加。在0.5、5和20％（NH_4）_2S溶液中形成的S终止之间的阈值时间没有显着差异。通过表面氧化，观察到S在Ge表面上的解吸。硫在S末端Ge（100）表面上的解吸行为与形成S末端的（NH_4）_2S溶液的浓度无关。 Ge表面的非理想S端接可能与Ge表面的剧烈氧化有关。最后，随着S末端Ge（100）表面的脱硫作用，氧化物的生长被加速。

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