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Preparation And Properties Of Zno Layers Grown By Various Methods

机译：各种方法生长的Zno层的制备及性能

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摘要

In the presented paper the structural properties of ZnO layers prepared by various methods are presented. Their surface morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Composition depth profiling was measured by secondary ion mass spectroscopy (SIMS). Layers deposited by RF diode sputtering from ZnO:Al_2O_3 target resulted in conductive ZnO:AI polycrystalline n-type layer. Nitrogen doped zinc oxide (ZnO:AI,N) layers were prepared by RF diode sputtering from the same target by different Ar/N_2 gas mixture ratio. The p-type conductivity of ZnO:Al,N layers have been caused by the incorporation of the nitrogen acceptor into ZnO. ZnO layers deposited by pulsed laser deposition (PLD) in O_2 atmosphere at substrate temperature of 400 ℃ showed both n- and p-type conductivity and polycrystalline grain formation. Additionally the structural and electrical properties of RF diode sputtered structures were investigated before and after annealing in temperature range of 400-600 ℃. After annealing in N_2 atmosphere the conductivity of ZnO layer increased and ZnO/Si interface exhibited diffusion of Si into ZnO and O into Si.
机译：在本文中，介绍了通过各种方法制备的ZnO层的结构特性。使用扫描电子显微镜（SEM）和原子力显微镜（AFM）研究了它们的表面形态。通过二次离子质谱法（SIMS）测量组成深度分布。通过RF二极管溅射从ZnO：Al_2O_3靶沉积的层形成导电的ZnO：Al多晶n型层。通过射频二极管溅射从相同靶材以不同的Ar / N_2气体混合比制备氮掺杂的氧化锌（ZnO：Al，N）层。 ZnO：Al，N层的p型导电性是由于将氮受体掺入ZnO中引起的。在200℃的衬底温度下，通过脉冲激光沉积（PLD）在O_2气氛中沉积的ZnO层既具有n型和p型导电性，又形成了多晶晶粒。此外，在400-600℃温度范围内进行退火前后，研究了射频二极管溅射结构的结构和电性能。在N_2气氛中退火后，ZnO层的电导率增加，ZnO / Si界面显示Si扩散到ZnO中，O扩散到Si中。

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