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Quantification In Dynamic Sims: Current Status And Future Needs

机译：动态模拟市民中的量化：现状和未来需求

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Dynamic SIMS has made great strides in quantification. The use of ion-implanted standards has made quantification routine for any element in a wide range of matrices. Both contaminant and matrix measurements can be reliably quantified in the same depth profile for selected multi-element substrates, such as SiGe and AlGaN. Dose measurements with less than 1% reproducibility have been demonstrated for magnetic sector, quadrupole, and time-of-flight instruments. Progress has been made in quantification at the surface, at interfaces, in thin layers, in insulators, within small areas, and for two and three dimensions. Current challenges include quantification in a proliferation of layers, interfaces, and elements, and obtaining quantitative information from the smallest possible area. Analyses using complementary techniques will be useful for these difficult SIMS measurements. Focused ion beam specimen preparation has shown promise for small area and three-dimensional analyses. Developments in ion sources show potential for small area analysis using focused ion beam SIMS.
机译：动态SIMS在量化方面取得了长足的进步。离子注入标准液的使用已使各种基质中任何元素的定量分析成为常规。对于选定的多元素衬底，例如SiGe和AlGaN，可以在相同的深度剖面中可靠地量化污染物和基质的测量结果。磁性扇区，四极子和飞行时间仪器的剂量测量再现性均低于1％。在表面，界面，薄层，绝缘体，小区域内以及二维和三维的量化方面已经取得了进展。当前的挑战包括量化层，界面和元素的扩散，以及从尽可能小的区域获得量化信息。使用辅助技术进行的分析对于这些困难的SIMS测量将非常有用。聚焦离子束样品制备显示出对小面积和三维分析的希望。离子源的发展显示了使用聚焦离子束SIMS进行小面积分析的潜力。

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