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首页> 外文期刊>Applied Surface Science >Sims Characterization Of Segregation In Inas/gaas Heterostructures
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Sims Characterization Of Segregation In Inas/gaas Heterostructures

机译：Inas / gaas异质结构中偏析的Sims表征

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摘要

We performed a detailed study of in situ indium segregation in InAs/GaAs heterostructures during conventional MBE growth process. A set of heterostructures grown under different substrate temperatures was tested. We used in the study a recently developed equation for SIMS's Depth Resolution Function (DRF), which included Recoil Implantation, Cascade Mixing and Sputtering Induced Roughness phenomena (RMR model). Segregation process was included in this DRF as an exponentially increasing function. Then we found from experimental SIMS depth profiles segregation parameters for different growth temperatures and the energy activation for the segregation process. It was found equal to 0.27 eV that is close to values published in literature. A segregation free regime of the growth process was developed experimentally.
机译：我们对传统MBE生长过程中InAs / GaAs异质结构中的原位铟偏析进行了详细研究。测试了在不同衬底温度下生长的一组异质结构。我们在研究中使用了最近开发的SIMS深度分辨率函数（DRF）方程，其中包括反冲植入，级联混合和溅射诱导粗糙度现象（RMR模型）。隔离过程已作为指数增加函数包含在此DRF中。然后，我们从实验SIMS深度剖面中发现了不同生长温度下的偏析参数以及偏析过程中的能量激活。发现等于0.27 eV，接近文献中公布的值。通过实验开发了无偏析的生长过程。

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