• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Formation Of Sic Using Low Energy Co_2 Ion Implantation In Silicon
【24h】

Formation Of Sic Using Low Energy Co_2 Ion Implantation In Silicon

机译：硅中低能Co_2离子注入形成Sic

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 × 10~(16) and 3 × 10~(18) ions/cm~2. X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.
机译：将具有29 keV能量的二氧化碳离子在接近室温的条件下注入（4 0 0）高纯度p型硅晶片中，剂量范围为1×10〜（16）至3×10〜（18）离子/厘米〜2。 X射线衍射分析（XRD）用于表征在注入的硅衬底中SiC的形成。由上述技术获得的SiC的形成及其晶体结构。通过原子力显微镜（AFM）观察到的不同剂量在硅表面，晶粒上引起的形貌变化并对其进行评估。红外反射率（IR）和拉曼散射测量用于确认植入的Si衬底中SiC的形成。通过四点探针技术测量的植入样品的电性能。结果表明，二氧化碳离子的注入直接导致15R-SiC的形成。通过增加注入剂量，还观察到粗糙度和薄层电阻率特性的显着变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号