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首页> 外文期刊>Applied Surface Science >Strong Inter-conduction-band Absorption In Heavily Fluorine Doped Tin Oxide
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Strong Inter-conduction-band Absorption In Heavily Fluorine Doped Tin Oxide

机译：重氟掺杂氧化锡中的强导带间吸收

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摘要

The optical, electrical and structural properties of thin film tin oxide (TO), F-doped tin oxide (FTO; n_F ≈ 6 × 10~(20) cm~(-3)) and highly F-doped tin oxide (hFTO; n_F = 10 × 10~(20) cm~(-3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect. X-ray fluorescence and transmission/ reflection measurements. The resistivity (ρ = 32 × 10~(-4) Ω cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n_F is increased (ρ = 6 × 10~(-4)Ω cm for FTO but 25 × 10~(-4)Ω cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n_c ≈ 6 × 10~(20) cm~(-3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E_g ≈ 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.
机译：薄膜氧化锡（TO），F掺杂氧化锡（FTO; n_F≈6×10〜（20）cm〜（-3））和高F掺杂氧化锡（hFTO;通过原子热显微镜，霍尔效应研究了通过喷雾热解技术生长的n_F = 10×10〜（20）cm〜（-3））。 X射线荧光和透射/反射测量。当F浓度n_F增加时，电阻率（固有氧化锡的ρ= 32×10〜（-4）Ωcm）显示出吸引人的特性（对于FTO，ρ= 6×10〜（-4）Ωcm但25×10〜（ hFTO为-4）Ωcm），而高F浓度下载流子浓度几乎恒定（FTO和hFTO为n_c≈6×10〜（20）cm〜（-3））。因此，F似乎在hFTO中既充当供体又充当补偿性受体。高载流子浓度对光学带边缘吸收有很大影响。本征TO的室温带隙能量为E_g≈3.2 eV，在约3.8 eV时开始吸收，而高掺杂FTO和hFTO样品在2-3 eV时显示出较强的吸收。基于FTO的密度泛函计算的理论分析表明，这不是带隙区域内的缺陷状态，而是F供体状态与主体导带杂交并结合了最低能带填充的结果自由载流子的导带。这允许自由电子的光子辅助的互导带跃迁到能量较高的和空的导带，从而产生低于间隙的吸收峰。

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