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首页> 外文期刊>Applied Surface Science >Effect of nickel on the initial growth behavior of electroless Ni-Co-P alloy on silicon substrate
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Effect of nickel on the initial growth behavior of electroless Ni-Co-P alloy on silicon substrate

机译：镍对硅基化学镀Ni-Co-P合金初始生长行为的影响

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摘要

In this work the small amounts of NiSO_4 was added to a basic electroless plating bath of CoSO_4 with Na_2H_2PO_2 as reducing agent for the deposition of Co-Ni-P film on a silicon substrate. The initial growth behavior, containing plating rate, chemical composition, crystal structure, surface morphology and micro-structure, of the electroless plating film was characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM). The results showed that the growth morphology variation of the Co-Ni-P films deposited in the basic CoSO_4 + small amounts of NiSO_4 bath is the same as that of Co-P film deposited in the basic COSO_4 bath, the plating rate of the Co-Ni-P film is much more rapid than that of the, Co-P film, the Ni/Co wt.% in the Co-Ni-P film is greatly larger than that in the plating bath, and the structure of as-deposited film is crystalline at first stage and later stage.
机译：在这项工作中，将少量的NiSO_4添加到以Na_2H_2PO_2作为还原剂的CoSO_4的基本化学镀浴中，以在硅基板上沉积Co-Ni-P膜。通过扫描电子显微镜（SEM）和透射电子显微镜（TEM）表征了化学镀膜的初始生长行为，包括镀覆速率，化学组成，晶体结构，表面形态和微观结构。结果表明，碱性CoSO_4 +少量NiSO_4浴中沉积的Co-Ni-P膜的生长形态变化与碱性COSO_4浴中沉积的Co-P膜的生长形态变化相同，Co的镀覆速率-Ni-P膜比Co-P膜快得多，Co-Ni-P膜中的Ni / Co wt。％比电镀浴中的Ni / Co wt。％大得多，并且as-的结构沉积的膜在第一阶段和第二阶段都是结晶的。

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