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首页> 外文期刊>Applied Surface Science >Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe (: Sn)
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Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe (: Sn)

机译：层状半导体n型InSe（：Sn）中随温度变化的光吸收测量值和肖特基接触行为

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The layered n-InSe(:Sn) single crystal samples have been cleaved from a large crystal ingot grown from non-stoichiometric melt by the Bridgman-Stockbarger method. It has been made the absorption measurements of these samples without Schottky contact under electric fields of 0.0 and 6000 V cm~(-1). The band gap energy value of the InSe:Sn has been calculated as 1.36 ± 0.01 eV (at 10 K) and 1.28 ± 0.01 eV (at 300 K) under zero electrical field, and 1.31 ± 0.01 eV (at 10 K) and 1.26 ± 0.01 eV (at 300 K) under 6000 Vcm~(-1). The current-voltage (I-V) characteristics of Au-Ge/InSe(:Sn)/In Schottky diodes have been measured in the temperature range 80-320 K with a temperature step of 20 K. An experimental barrier height (BH) Φ_(ap) value of about 0.70 ± 0.01 eV was obtained for the Au-Ge/InSe(:Sn)/In Schottky diode at the room temperature (300 K). An abnormal decrease in the experimental BH Φ_b and an increase in the ideality factor n with a decrease in temperature have been explained by the barrier inhomogeneities at the metal-semiconductor interface. From the temperature-dependent I-V characteristics of the Au-Ge/InSe(:Sn)/In contact, that is, Φ_(bo) and A~* as 0.94 ± 0.02 and 0.58 ± 0.02 eV, and 27 ± 2 and 21 ± 1 (A/cm~2 K~2), respectively, have been calculated from a modified ln(I_o/T~2) — q~2σ_s~2/2k~2T~2 versus 1/T plot for the two temperature regions. The Richardson constant values are about two times larger than the known value of 14.4 (A/cm~2 K~2) known for n-type InSe. Moreover, in the temperature range 80-320 K, we have also discussed whether or not the current through the junction has been connected with TFE.
机译：分层的n-InSe（：Sn）单晶样品已通过Bridgman-Stockbarger方法从非化学计量熔体生长的大晶锭上切下。在0.0和6000 V cm〜（-1）的电场下，已经对这些样品进行了无肖特基接触的吸收测量。 InSe：Sn的带隙能量值已被计算为在零电场下为1.36±0.01 eV（在10 K时）和1.28±0.01 eV（在300 K时），以及1.31±0.01 eV（在10 K时）和1.26在6000 Vcm〜（-1）下为±0.01 eV（在300 K下）。已在80-320 K的温度范围内以20 K的温度阶跃测量了Au-Ge / InSe（：Sn）/ In肖特基二极管的电流-电压（IV）特性。实验势垒高度（BH）Φ_（在室温（300 K）下，Au-Ge / InSe（：Sn）/ In肖特基二极管的ap）值约为0.70±0.01 eV。通过金属-半导体界面处的势垒不均匀性，可以解释实验BHΦ_b的异常降低和理想因子n随温度的降低而增加。根据Au-Ge / InSe（：Sn）/ In触点随温度变化的IV特性，即Φ_（bo）和A〜*为0.94±0.02和0.58±0.02 eV，以及27±2和21±根据修改后的ln（I_o / T〜2）— q〜2σ_s〜2 / 2k〜2T〜2相对于两个温度区域的1 / T图分别计算出1（A / cm〜2 K〜2） 。理查森常数约为n型InSe的14.4（A / cm〜2 K〜2）已知值的两倍。此外，在80-320 K的温度范围内，我们还讨论了通过结的电流是否已与TFE连接。

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