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首页> 外文期刊>Applied Surface Science >Compositional contrast in Al_xGa_(1-x)N/GaN heterostructures using scanning spreading resistance microscopy
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Compositional contrast in Al_xGa_(1-x)N/GaN heterostructures using scanning spreading resistance microscopy

机译：使用扫描扩散电阻显微镜观察Al_xGa_（1-x）N / GaN异质结构的成分对比

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摘要

Scanning spreading resistance microscopy has found extensive use as a dopant-profiling technique for silicon-based devices, and to a lesser extent for some Ⅲ-Ⅴ materials. Here we demonstrate its efficacy for wide bandgap nitrides and, in particular, show that it may be used to differentiate between layers of different Al-content in an Al_xGa_(1-x)N/GaN heterostructure. A monotonic increase in resistance signal with increasing Al-content is demonstrated, under optimal imaging conditions. The variation in measured resistance with applied bias is shown to be dependent on the aluminium content, and this is discussed, along with other issues, in the context of potential quantification of unknown samples. The procedure for forming an optimal image is different from that for silicon, in terms of contact forces and applied biases.
机译：扫描扩展电阻显微镜已被广泛用作硅基器件的掺杂剂轮廓分析技术，对某些Ⅲ-Ⅴ类材料的应用程度较小。在这里，我们证明了其对宽带隙氮化物的功效，特别是表明它可用于区分Al_xGa_（1-x）N / GaN异质结构中不同Al含量的层。在最佳成像条件下，电阻信号随Al含量的增加而单调增加。结果表明，所测电阻随施加偏压的变化取决于铝含量，在未知样品的潜在定量分析中，将与其他问题进行讨论。就接触力和施加的偏压而言，形成最佳图像的步骤与硅步骤不同。

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