• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures
【24h】

Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures

机译：具有低温绝缘层的Al / p-Si肖特基势垒二极管的电流传导机理

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The forward bias current-voltage (I-V) characteristics of Al/p-Si (MS) Schottky diodes with native insulator layer were measured in the temperature range of 80-300 K. The obtained zero bias barrier height Φ_(BO)(I-V), ideality factor (n) and series resistance (R_s) determined by using thermionic emission (TE) mechanism show strong temperature dependence. There is a linear correlation between the Φ_(BO)(I-V) and n because of the inhomogeneties in the barrier heights (BHs). Calculated values from temperature dependent I-V data reveal an unusual behaviour such that the Φ_(BO) decreases, as the n and R_s values are increasing with decreasing absolute temperature, and these changes are more pronounced especially at low temperatures. Such temperature dependence of BH is contradictory with the reported negative temperature coefficient of the barrier height. In order to explain this behaviour we have reported a modification in the expression reverse saturation current I_o including the n and the tunnelling factor (αX~(1/2)δ) estimated to be 15.5. Therefore, corrected effective barrier height Φ_(bef)(I-V) versus temperature has a negative temperature coefficients (α = -2.66 × 10~(-4) eV/K) and it is in good agreement with negative temperature coefficients ( α = -4.73 × 10~(-4) eV/K) of Si band gap. In addition, the temperature dependent energy distribution of interface states density N_(ss) profiles was obtained from the forward bias I-V measurements by taking into account the bias dependence of the Φ_e and n. The forward bias I-V characteristics confirm that the distribution of N_(ss), R_s and interfacial insulator layer are important parameters that the current conduction mechanism of MS Schottky diodes.
机译：在80-300 K的温度范围内测量了具有固有绝缘层的Al / p-Si（MS）肖特基二极管的正向偏置电流-电压（IV）特性。获得的零偏置势垒高度Φ_（BO）（IV）通过热电子发射（TE）机理确定的理想因子（n）和串联电阻（R_s）具有很强的温度依赖性。由于势垒高度（BHs）的不均匀性，Φ_（BO）（I-V）与n之间存在线性关系。根据温度相关的I-V数据计算得出的值显示出一种异常行为，使得Φ_（BO）减小，因为n和R_s值随绝对温度的降低而增加，并且这些变化尤其在低温下更为明显。 BH的这种温度依赖性与报道的势垒高度的负温度系数相矛盾。为了解释这种行为，我们已经报告了对反向饱和电流I_o的一种修改，其中包括n和估计为15.5的隧穿因子（αX〜（1/2）δ）。因此，校正后的有效势垒高度Φ_（bef）（IV）与温度的关系为负温度系数（α= -2.66×10〜（-4）eV / K），与负温度系数具有很好的一致性（α=- Si带隙为4.73×10〜（-4）eV / K）。另外，通过考虑Φ_e和n的偏置依赖性，从前向偏置IV测量获得了界面状态密度N_（ss）曲线的温度依赖性能量分布。正向偏置电压特性证实了N_（ss），R_s和界面绝缘层的分布是MS肖特基二极管的电流传导机理的重要参数。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号