Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

Erwu Niu; Li Li; Guohua Lv; Wenran Feng; Huan Chen; Songhua Fan; Size Yang; Xuanzong Yang

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Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

机译：阴极真空电弧技术制备的氮化钽薄膜的合成与表征

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Tantalum nitride films were deposited on silicon wafer and steel substrates by cathodic vacuum arc in N_2/Ar gas mixtures. The chemical composition, crystalline microstructure and morphology of the films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. According to the results, film composition and microstructure depends strongly on the N_2 partial pressure and the applied negative bias (V_s).

机译：在N_2 / Ar气体混合物中，通过阴极真空电弧将氮化钽薄膜沉积在硅片和钢基底上。分别通过X射线衍射（XRD），X射线光电子能谱（XPS）和原子力显微镜（AFM）研究了薄膜的化学组成，晶体微观结构和形态。根据结果，膜组成和微观结构在很大程度上取决于N_2分压和施加的负偏压（V_s）。

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来源
《Applied Surface Science》 |2007年第12期|5223-5227|共5页
作者
Erwu Niu; Li Li; Guohua Lv; Wenran Feng; Huan Chen; Songhua Fan; Size Yang; Xuanzong Yang;
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作者单位

Institute of Physics, Chinese Academy of Science, Beijing 100080, China;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
cathodic vacuum arc; tantalum nitride;

机译：阴极真空电弧氮化钽;

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Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

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