Synthesis of GaN phase by ion implantation

Vikas Baranwal; Richa Krishna; Fouran Singh; Ambuj Tripathi; Avinash C. Pandey; Dinakar Kanjilal

首页> 外文期刊>Applied Surface Science >Synthesis of GaN phase by ion implantation

【24h】

Synthesis of GaN phase by ion implantation

机译：离子注入法合成GaN相

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

GaN phase is synthesized using systemic implantation of nitrogen ions of multiple energies (290, 130 and 50 keV) into Zn-doped GaAs (100) at room temperature and subsequent annealing at 850℃ for 30 min in Ar + H_2 atmosphere. The implanted doses of nitrogen ions are 5 × 10~(16) and 1 × 10~(17) ions-cm~(-2). Glancing angle X-ray diffraction studies show that hexagonal phase of GaN were formed. The photoluminescence studies show the emission from the band edge as well as from point defects.

机译：GaN相的合成方法是：在室温下将多种能量（290、130和50 keV）的氮离子系统注入到掺杂Zn的GaAs（100）中，然后在Ar + H_2气氛中在850℃退火30分钟。氮离子的注入剂量为5×10〜（16）和1×10〜（17）离子-cm〜（-2）。掠射角X射线衍射研究表明，形成了GaN的六方相。光致发光研究表明，能带边缘以及点缺陷都发出了光。

著录项

来源
《Applied Surface Science》 |2007年第12期|5317-5319|共3页
作者
Vikas Baranwal; Richa Krishna; Fouran Singh; Ambuj Tripathi; Avinash C. Pandey; Dinakar Kanjilal;
展开▼
作者单位

Department of Physics, University of Allahabad, Allahabad 211002, India;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
GaN; ion implantation; photoluminescence; X-ray diffraction;

机译：氮化镓;离子注入光致发光X射线衍射;

相似文献

外文文献
中文文献
专利

1. In situ observation of secondary phase formation in Fe implanted GaN annealed in low pressure N_2 atmosphere [J] . G. Talut, J. Grenzer, H. Reuther, Applied Physicsletters . 2010,第23期

机译：原位观察在低压N_2气氛中退火的Fe注入GaN中的第二相形成
2. Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C~+ -ion implantation into Si(111) substrate [J] . A. Yamamoto, T. Yamauchi, T. Tanikawa, Journal of Crystal Growth . 2004,第2a3期

机译：在3c-SiC / Si（111）模板上通过C〜+离子注入Si（111）衬底形成的GaN有机金属气相外延生长
3. Hexagonal-to-cubic phase transformation in GaN nanowires by Ga~(+) implantation [J] . S. Dhara, A. Datta, C. T. Wu, Applied Physics Letters . 2004,第26期

机译：Ga〜（+）注入在GaN纳米线中的六方相立方相变
4. Ion Implantation into GaN and Implanted GaN Power Transistors [C] . K. Nomoto, K. Takahashi, T. Oikawa, GaN amp; SiC power technologies 5 . 2015

机译：离子注入GaN和注入的GaN功率晶体管
5. Electron Microscopy Characterization of GaN-on-GaN Vertical Power Devices =Electron Microscopy Characterization of GaN-on-GaN Vertical Power Devices [D] . Peri, Prudhvi Ram. 2021

机译：GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
6. Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates [O] . Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, 2018

机译：独立式GaN衬底上注入Mg和掺杂Mg的GaN层中缺陷的比较分析
7. Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation [O] . Dhara S. 2010

机译：Ga +注入在GaN纳米线中从六边形到立方相变
8. Ohmic contacts to Si-implanted and un-implanted n-type GaN [R] . Brown, J. , Ramer, J. , Zheng, L. F. , 1996

机译：与si注入和未注入的n型GaN的欧姆接触

Synthesis of GaN phase by ion implantation

摘要

著录项

相似文献

相关主题

期刊订阅