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首页> 外文期刊>Applied Surface Science >Atmospheric pressure chemical vapour deposition of vanadium diselenide thin films
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Atmospheric pressure chemical vapour deposition of vanadium diselenide thin films

机译：二硒化钒薄膜的常压化学气相沉积

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摘要

Atmospheric pressure chemical vapour deposition (APCVD) of vanadium diselenide thin films on glass substrates was achieved by reaction of [V(NMe_2)_4] and ~tBu_2Se. X-ray diffraction showed that the VSe_2 films were crystalline with preferential growth either along the (1 0 1) or the (1 1 0) direction. Energy-dispersive analysis by X-rays (EDAX) gave a V:Se ratio close to 1:2 for all films. The films were matt black in appearance, were adhesive, passed the Scotch tape test but could be scratched with a steel scalpel. SEM showed that the films were composed of plate-like crystallites orientated parallel to the substrate which become longer and thicker with increasing deposition temperature. Attempts to produce vanadium selenide films were also performed using ~tBu_2Se and two different vanadium precursors: VCl_4 and VOCl_3. Both were found to be unsuitable for producing VSe_2 from the APCVD reaction with ~tBu_2Se. The VSe_2 showed charge density wave transition at 110-115 K.
机译：通过[V（NMe_2）_4]和〜tBu_2Se的反应，在玻璃基板上实现了二硒化钒薄膜的大气压化学气相沉积（APCVD）。 X射线衍射表明，VSe_2膜是结晶的，沿（1 0 1）或（1 1 0）方向优先生长。通过X射线（EDAX）进行的能量色散分析得出，所有薄膜的V：Se比率均接近1：2。薄膜外观为亚光黑色，具有粘性，通过了透明胶带测试，但可用钢手术刀刮擦。 SEM表明，薄膜由平行于基板取向的板状微晶组成，随着沉积温度的升高，它们变得越来越长和越来越厚。还尝试使用〜tBu_2Se和两种不同的钒前体VCl_4和VOCl_3来制备硒化钒薄膜。发现两者都不适合通过APCVD与〜tBu_2Se的反应生成VSe_2。 VSe_2在110-115 K处显示出电荷密度波跃迁。

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