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首页> 外文期刊>Applied Surface Science >Enhanced ferroelectric property of (Pb_(0.95)Ca_(0.05))(Nb_(0.02)Zr_(0.80)Ti_(0.20))O_3 thin films prepared by RF magnetron sputtering
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Enhanced ferroelectric property of (Pb_(0.95)Ca_(0.05))(Nb_(0.02)Zr_(0.80)Ti_(0.20))O_3 thin films prepared by RF magnetron sputtering

机译：射频磁控溅射制备（Pb_（0.95）Ca_（0.05））（Nb_（0.02）Zr_（0.80）Ti_（0.20））O_3薄膜的增强铁电性能

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摘要

(Pb_(0.95)Ca_(0.05))(Nb_(0.02)Zr_(0.80)Ti_(0.20))O_3 [PCNZT] thin films were deposited on the Pt(1 1 1)/Ti/SiO_2/Si(1 0 0) substrates by RF magnetron sputtering with and without a LaNiO_3 [LNO] buffer layer. Ca and Nb elements in PZT films enhance the ferroelectric property, LaNiO_3 buffer layer improves the crystal quality of the PCNZT thin films. PCNZT thin films possess better ferroelectric property than that of PZT films for Ca and Nb ion substitution, moreover, PCNZT thin films with a LNO buffer layer possess (1 0 0) orientation and good ferroelectric properties with high remnant polarization (P_r = 38.1 μC/cm~2), and low coercive field (E_c = 65 kV/cm), which is also better than that of PCNZT thin films without a LNO buffer layer (P_r = 27.9 μC/cm~2, E_c = 74 kV/cm). The result shows that enhanced ferroelectric property of PZT films can be obtained by ion substitution and buffer layer.
机译：（Pb_（0.95）Ca_（0.05））（Nb_（0.02）Zr_（0.80）Ti_（0.20））O_3 [PCNZT]薄膜沉积在Pt（1 1 1）/ Ti / SiO_2 / Si（1 0 0 ）磁控管溅射有和没有LaNiO_3 [LNO]缓冲层的基板。 PZT薄膜中的Ca和Nb元素增强了铁电性能，LaNiO_3缓冲层改善了PCNZT薄膜的晶体质量。 PCNZT薄膜具有比PZT薄膜更好的铁电性能，可替代Ca和Nb离子。此外，具有LNO缓冲层的PCNZT薄膜具有（1 0 0）取向，并且具有良好的铁电性能和高残留极化（P_r = 38.1μC/ cm〜2）和低矫顽场（E_c = 65 kV / cm），也比没有LNO缓冲层的PCNZT薄膜要好（P_r = 27.9μC/ cm〜2，E_c = 74 kV / cm） 。结果表明，通过离子取代和缓冲层可以提高PZT薄膜的铁电性能。

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