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Stabilization of the pentagonal surface of the icosahedral AlPdMn quasicrystal by controlled Si absorption

机译:通过控制硅吸收来稳定二十面体AlPdMn准晶体的五边形表面

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摘要

The Debye-temperature of the pentagonal surface of the icosahedral AlPdMn quasicrystal (QC) is measured by means of low-energy electron diffraction after the absorption of different amounts of Si. We observe an increase of the surface Debye-temperature from 300 ± 7 K for the freshly prepared surface to 330 ± 7 K after the absorption of 60-A Si. Because the quasicrystalline order persists at the surface in spite of the diffusion of Si into the substrate, we suggest that the diffusion is dominated by a vacancy-mediated process.
机译:二十面体AlPdMn准晶体(QC)五角形表面的德拜温度是在吸收不同量的Si后通过低能电子衍射法测量的。我们观察到吸收60-A Si后,表面德拜温度从新制备的表面的300±7 K增加到330±7K。尽管Si扩散到衬底中,但由于准晶顺序仍然存在于表面,因此我们建议扩散以空位介导的过程为主。

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