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首页> 外文期刊>Applied Surface Science >Interfacial reactions during sputter deposition of Ta and TaN films on organosilicate glass: XPS and TEM results
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Interfacial reactions during sputter deposition of Ta and TaN films on organosilicate glass: XPS and TEM results

机译：在有机硅玻璃上溅射沉积Ta和TaN膜期间的界面反应：XPS和TEM结果

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摘要

The evolution of the interface between organosilicate glass (OSG) and sputter deposited Ta or TaN films has been characterized by X-ray phototelectron spectroscopy (XPS). Cross-sectional TEM (XTEM) was also used to analyze Ta/OSG and TaN/OSG/interfaces for samples formed under different deposition conditions. XPS data show that Ta deposition onto OSG results in formation of an interphase between 1 and 2 nm thick composed of oxidized Ta and C. Metallic Ta is then formed on top of the interfacial region. In contrast, Ta-rich TaN formation occurs with some nitridation of the substrate, but with no significant interphase formation. The XPS data are consistent with the XTEM data. The XTEM results for Ta/OSG indicate a spatially irregular interface over a length scale of ～2 nm, while results for TaN/OSG indicate a spatially abrupt region.
机译：X射线光电子能谱（XPS）表征了有机硅玻璃（OSG）与溅射沉积的Ta或TaN薄膜之间界面的演变。截面TEM（XTEM）还用于分析Ta / OSG和TaN / OSG /界面在不同沉积条件下形成的样品。 XPS数据显示Ta沉积在OSG上会导致形成1到2 nm厚的由氧化的Ta和C组成的界面。然后在界面区域的顶部形成金属Ta。相比之下，富含Ta的TaN的形成发生了底物的一些氮化，但是没有明显的相间形成。 XPS数据与XTEM数据一致。 Ta / OSG的XTEM结果表明在〜2 nm的长度尺度上空间不规则界面，而TaN / OSG的XTEM结果表明空间是突变区域。

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