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BST thin films obtained by PLD for applications in electronics

机译：PLD获得的BST薄膜用于电子产品

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摘要

Barium strontium titanate (BST) bulk ceramic with composition Ba_(0.5)Sr_(0.5)TiO_3 was produced by solid-state reaction and was used as target for PLD thin film deposition. A Nd-YAG laser, working at 5-10 Hz and different wavelengths has been used. Thin films of stoichiometric BST were deposited on alumina substrate with the thickness between 400 and 500 nm. An aditional annealing was carried out at 800 ℃ for 6 h. XRD and SEM were used for sample characterization. Capacity measurements were performed versus temperature at 100 kHz in a large temperature range. A diffuse ferroelectric-paraelectric phase transition with T_C = -72 ℃ for the BST thin film was determined. A 5% tunability was measured in the transition region.
机译：通过固相反应制备组成为Ba_（0.5）Sr_（0.5）TiO_3的钛酸锶钡（BST）块状陶瓷，并将其用作PLD薄膜沉积的靶材。使用了工作在5-10 Hz和不同波长的Nd-YAG激光器。化学计量的BST薄膜以400至500 nm的厚度沉积在氧化铝基板上。在800℃下进行6 h的常规退火。 XRD和SEM用于样品表征。在大温度范围内，相对于100 kHz的温度进行容量测量。确定了BST薄膜的T_C = -72℃的扩散铁电-顺电相变。在过渡区域测得的可调性为5％。

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