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首页> 外文期刊>Applied Surface Science >Influence of in situ nitrogen pressure on crystallization of pulsed laser deposited AlN films
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Influence of in situ nitrogen pressure on crystallization of pulsed laser deposited AlN films

机译：原位氮气压力对脉冲激光沉积AlN薄膜结晶的影响

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摘要

Aluminum nitride (AlN) thin films obtained by pulsed laser deposition (PLD) with a KrF~* laser source (λ = 248 nm, τ ≥ 7 ns) at a substrate temperature of 800℃ and different values of ambient nitrogen pressure up to 10 Pa have been studied. Precursors in the plasma plume were studied by optical multichannel emission spectroscopy. Emission spectra taken close to the target revealed the presence of atomic, single and multiple ionized Al and N species, as well as AlN molecular species. The analysis of the XRD patterns revealed that all films had a polycrystallhie structure with mixed cubic and hexagonal phases. For AlN films deposited in vacuum, the structure is predominantly cubic with a small fraction of hexagonal phase. The cubic phase had a lattice parameter of 0.4045 nm. The films deposited in nitrogen ambient have a cubic crystalline structure. At maximum nitrogen pressure of 10 Pa the lattice parameter decreases to a = 0.3949 nm.
机译：氮化铝（AlN）薄膜是通过在KrF〜*激光源（λ= 248 nm，τ≥7 ns）下于800℃的基板温度和高达10的不同环境氮气压力下通过脉冲激光沉积（PLD）获得的霸已经研究过了。通过光学多通道发射光谱学研究了等离子体羽中的前体。接近目标的发射光谱表明存在原子，单个和多个离子化的Al和N物种以及AlN分子物种。对XRD图谱的分析表明，所有膜均具有混合立方和六方相的多晶结构。对于在真空中沉积的AlN薄膜，该结构主要为立方晶，具有一小部分六方相。立方相的晶格参数为0.4045nm。在氮气环境中沉积的膜具有立方晶体结构。在最大氮气压力为10 Pa时，晶格参数降低至a = 0.3949 nm。

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