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首页> 外文期刊>Applied Surface Science >Origin Of Localized States In Graphite: Indirect Photoemission processes Or Impurities?
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Origin Of Localized States In Graphite: Indirect Photoemission processes Or Impurities?

机译：石墨中局部状态的起源：间接光发射过程或杂质？

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摘要

The electronic band structure of different types of graphite samples have been investigated in order to identify the origin of non-dispersive density of states recently reported in the literature. A systematic series of synchrotron radiation angle resolved photoemission spectroscopy (ARPES) measurements on graphite single crystal, highly oriented graphite (HOPG) and epitaxial grown graphite single crystal on 6H-SiC(0001) samples, have been carried out as well as compared with theoretical tight binding calculations. Our results indicate that these localized states are present in all the graphite-investigated samples showing the same non-dispersive character and at the same binding energies. The photoemission data taken at several photon energies demonstrate that these states are not surface states nor due to indirect photoemission processes. It seems that they are closely related to the level of impurities present in the studied samples.
机译：为了确定文献中最近报道的状态的非分散密度的起源，已经研究了不同类型的石墨样品的电子带结构。已对6H-SiC（0001）样品上的石墨单晶，高取向石墨（HOPG）和外延生长的石墨单晶进行了一系列系统的同步辐射角分辨光发射光谱（ARPES）测量，并与理论值进行了比较紧密绑定计算。我们的结果表明，这些局部状态存在于所有石墨研究的样品中，这些样品显示出相同的非分散特性和相同的结合能。在几个光子能量处获取的光发射数据表明，这些状态不是表面状态，也不是由于间接光发射过程引起的。看来它们与研究样品中存在的杂质水平密切相关。

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