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Synthesis And Characterization Of Organic/inorganic Heterostructure Films For Hybrid Light Emitting Diode

机译：混合发光二极管有机/无机异质结构薄膜的合成与表征

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Thin-film light emitting devices based on organic materials have been gathering attentions for applying a flat-panel display and a solid-state lighting. Alternatively, inorganic technologies such as Si-based thin-film technology have been growing almost independently. It is then expected that combining the Si-based thin-film technology with the organic light emitting diode (OLED) technology will develop innovative devices. Here, we report syntheses of the hybrid light emitting diode (LED) with a heterostructure consisting of p-type SiC_x and tris-(8-hydroxyquinoline) aluminum films and characterization for the hybrid LEDs. We present the energy diagram of the heterostructure, and describe that the use of high dark conductivities of the p-type SiC_x as well as inserting wide-gap intrinsic a-SiC_x at the p-type SiC_x/Alq interface are effective for improving device performance.
机译：基于有机材料的薄膜发光器件在应用平板显示器和固态照明方面已经引起了人们的关注。可替代地，诸如基于硅的薄膜技术的无机技术几乎已经独立地增长。然后，预计将基于Si的薄膜技术与有机发光二极管（OLED）技术相结合将开发出创新的器件。在这里，我们报告具有由p型SiC_x和tris-（8-hydroxyquinoline）铝膜组成的异质结构的混合发光二极管（LED）的合成以及混合LED的特性。我们给出了异质结构的能量图，并描述了使用p型SiC_x的高暗电导率以及在p型SiC_x / Alq界面处插入宽间隙本征a-SiC_x可以有效提高器件性能。

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