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Tailoring Of Nickel Silicide Contacts On Silicon Carbide

机译：在碳化硅上定制硅化镍触点

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Co-deposition technique by means of simultaneous ion beam sputtering of nickel and silicon onto SiC was performed for tailoring of Ni-silicide/SiC contacts. The prepared samples were analysed by means of XRD and XPS in order to obtain information about the surface and interface chemistry. Depth profiling was used in order to analyse in-depth information and chemical distribution of the specimens. XRD results showed that the main phase formed is Ni_2Si. The XPS analysis confirmed the formation of the silicide on the surface and showed details about the chemical composition of the layer and layer/substrate interface. Moreover, the XPS depth profiles with detailed analysis of XPS peaks suggested that tailoring of C distribution could be monitored by the co-deposition technique employed.
机译：通过将镍和硅同时离子束溅射到SiC上进行共沉积技术，以定制Ni-silicide / SiC触点。通过XRD和XPS对制备的样品进行分析，以获得有关表面和界面化学的信息。使用深度分析来分析样品的深入信息和化学分布。 XRD结果表明形成的主相为Ni_2Si。 XPS分析证实了表面上硅化物的形成，并显示了有关层和层/基底界面化学成分的详细信息。此外，对XPS峰进行了详细分析的XPS深度剖面表明，可以通过采用共沉积技术来监测C分布的定制。

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