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首页> 外文期刊>Applied Surface Science >Combinatorial study of phase transformation characteristics of a Ti-Ni-Pd shape memory thin film composition spread in view of microactuator applications
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Combinatorial study of phase transformation characteristics of a Ti-Ni-Pd shape memory thin film composition spread in view of microactuator applications

机译：鉴于微致动器的应用，Ti-Ni-Pd形状记忆薄膜组合物的相变特性的组合研究

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摘要

Phase transformation characteristics of a Ti-Ni-Pd shape memory thin film composition spread have been investigated. The thin film composition spread was fabricated from elemental targets using an ultra-high vacuum combinatorial magnetron sputter-deposition system and subsequent annealing at 500 ℃ for 1 h in situ. Automated temperature-dependent resistance measurements (R(T)), energy dispersive X-ray analysis (EDX) and X-ray diffraction measurements (XRD) have been applied for the high-throughput characterization of the composition spread. Reversible phase transformations within the measurement range of -40 to 250℃ within the Ti-Ni-Pd system were observed for compositions with Ti content between 50 and ～59 at.%. For Ti-richer films, Ti_2Ni and Ti_2Pd precipitates are inhibiting reversible phase transformations. The transformation temperatures and the thermal hysteresis were determined from R(T) measurements. Rising transformation temperatures with increasing Pd content and significantly lower thermal hysteresis for the B2-B19, compared to the B2-R-B19' transformations were found in good agreement with published data. For low Pd contents (<7-12 at.%, depending on the Ti content) two-stage B2-R-B19' transformations were observed. Compositions with higher Pd contents showed a single-stage B2-B19 transformation. Increasing Ti content within the B2-B19 transformation region results in a linear increase of the thermal hysteresis and decreasing transformation temperatures.
机译：研究了扩展的Ti-Ni-Pd形状记忆薄膜组合物的相变特性。使用超高真空组合磁控溅射沉积系统，由元素靶材制成薄膜组合物，然后在500℃下原位退火1 h。自动化的温度相关电阻测量（R（T）），能量色散X射线分析（EDX）和X射线衍射测量（XRD）已用于成分分布的高通量表征。 Ti-Ni-Pd体系中在-40至250℃的测量范围内可观察到可逆相变，其中Ti含量在50至59 at。％之间。对于富钛薄膜，Ti_2Ni和Ti_2Pd沉淀物抑制了可逆相变。从R（T）测量值确定转变温度和热滞后。与B2-R-B19'的转变相比，B2-B19的转变温度随着Pd含量的增加而升高，并且热滞明显降低，这与已发表的数据非常吻合。对于低的Pd含量（<7-12 at。％，取决于Ti含量），观察到了两阶段的B2-R-B19'转变。 Pd含量较高的组合物表现出单阶段B2-B19转变。 B2-B19相变区内Ti含量的增加导致热滞线性增加，并降低相变温度。

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  • 来源
    《Applied Surface Science》 |2007年第3期|743-748|共6页
  • 作者

    R. Zarnetta; A. Savan; S. Thienhaus; A. Ludwig;

  • 作者单位

    Combinatorial Material Science Group, Caesar, Ludwig-Erhard-Allee 2, 53175 Bonn, Germany Ruhr-University Bochum, Institute of Materials, 44780 Bochum, Germany;

    Combinatorial Material Science Group, Caesar, Ludwig-Erhard-Allee 2, 53175 Bonn, Germany;

    Combinatorial Material Science Group, Caesar, Ludwig-Erhard-Allee 2, 53175 Bonn, Germany Ruhr-University Bochum, Institute of Materials, 44780 Bochum, Germany;

    Combinatorial Material Science Group, Caesar, Ludwig-Erhard-Allee 2, 53175 Bonn, Germany Ruhr-University Bochum, Institute of Materials, 44780 Bochum, Germany;

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  • 正文语种 eng
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  • 关键词

    Ti-Ni-Pd; thin films; shape memory alloys; combinatorial materials synthesis; high-throughput characterization;

    机译：钛镍钯薄膜;形状记忆合金;组合材料合成;高通量表征;

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