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首页> 外文期刊>Applied Surface Science >Strongly oriented BST films on La_(0.9)Sr_(1.1)NiO_4 electrodes deposited on various substrates for integration of high capacitances on silicon
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Strongly oriented BST films on La_(0.9)Sr_(1.1)NiO_4 electrodes deposited on various substrates for integration of high capacitances on silicon

机译：在沉积在各种基板上的La_（0.9）Sr_（1.1）NiO_4电极上的强取向BST膜，用于在硅上集成高电容

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摘要

In this study, we demonstrate the successful oriented growth of Ba_(0.6)Sr_(0.4)TiO_3(h 0 0)/La_(0.9)Sr_(1.1)NiO_4(001) stacks by pulsed laser deposition on SiO_2/Si for application in integrated capacitances. We show that for specific deposition conditions the La_(0.9)Sr_(1.1)NiO_4 layer spontaneously grows along its c-axis both on SiO_2/Si and on Pt/Ti/SiO_2/Si substrates, serving as a template for the subsequent oriented growth of Ba_(0.6)Sr_(0.4)TiO_3 (BST). Moreover, as the resistivity of the La_(0.9)Sr_(1.1)NiO_4 layer is ～1 mΩ cm, it also fulfills the function of bottom electrode for integration of perovskite-based capacitors on silicon. This holds the promise of integrating epitaxial BST with very high dielectric constant compared to polycrystalline BST films. Still, preliminary capacitance measurements on Al/BST/La_(0.9)Sr_(1.1)NiO_4/SiO_2/Si capacitors indicate that the stack deposition needs further optimization.
机译：在这项研究中，我们证明了通过在SiO_2 / Si上进行脉冲激光沉积在Ba_（0.6）Sr_（0.4）TiO_3（h 0 0）/ La_（0.9）Sr_（1.1）NiO_4（001）堆中成功定向生长集成电容。我们表明，对于特定的沉积条件，La_（0.9）Sr_（1.1）NiO_4层在SiO_2 / Si和Pt / Ti / SiO_2 / Si衬底上均沿其c轴自发生长，充当后续定向生长的模板Ba_（0.6）Sr_（0.4）TiO_3（BST）的含量。此外，由于La_（0.9）Sr_（1.1）NiO_4层的电阻率为〜1mΩcm，因此还具有底部电极的功能，可将钙钛矿型电容器集成到硅上。与多晶BST薄膜相比，这具有将外延BST与非常高的介电常数集成在一起的希望。尽管如此，在Al / BST / La_（0.9）Sr_（1.1）NiO_4 / SiO_2 / Si电容器上进行的初步电容测量表明，堆叠沉积需要进一步优化。

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