Calculation of subband breadth of GaAs/AlGaAs superlattice

He LJ; Cheng XK; Li H; Zhang J; Zhou JM; Huang Q

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Calculation of subband breadth of GaAs/AlGaAs superlattice

机译：GaAs / AlGaAs超晶格的子带宽度的计算

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摘要

From the view of electron waving, taking account of the electron wave reflections at the interface between the well and the potential barrier layer we discuss the electronic states above the barriers in a GaAs/AlGaAs superlattice. We present a new method on calculating the breadth of the subband and the calculated breadth of GaAs/AlGaAs superlattice is in good agreement with experimental results. (c) 2005 Elsevier B.V. All rights reserved.

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《Applied Surface Science》 |2006年第16期|p. 5868-5872|共5页
作者
He LJ; Cheng XK; Li H; Zhang J; Zhou JM; Huang Q;
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作者单位

Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China;

Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
superlattice; electron states; subband breadth; QUANTUM-WELLS;

机译：超晶格;电子态;子带宽度;QUANTUM-WELLS;

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1. Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells [J] . H.C. Lee, K.W. Sun Microelectronics journal . 2003,第5a8期

机译：GaAs / AlGaAs量子阱中电子的子带间散射率的计算
2. Band discontinuities and calculations of GaAs‐AlGaAs superlattice structures [J] . Journal of Applied Physics . 1986,第11期

机译：GaAs-AlGaAs超晶格结构的能带不连续性和计算
3. Zero-magnetic-field spin splitting of conduction subbands in InGaAs/InAlAs and GaAs/AlGaAs quantum wells [J] . T. Ochiai, T. Tsuchiya, S. Yamada Journal of Superconductivity . 2003,第2期

机译：InGaAs / InAlAs和GaAs / AlGaAs量子阱中导带的零磁场自旋分裂
4. Spin-conserved electron transport to InGaAs quantum dots through GaAs/AlGaAs superlattice [C] . Satoshi Hiura, Junichi Takayama, Takayuki Kiba, Compound Semiconductor Week . 2019

机译：自旋保守电子通过GaAs / AlGaAs超晶格传输到InGaAs量子点
5. Ballistic transport in two-subband two-dimensional carrier systems at GaAs/AlGaAs heterojunctions. [D] . Lu, JengPing. 1998

机译：GaAs / AlGaAs异质结处两子带二维载波系统中的弹道传输。
6. A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m n ≤ 10) Superlattices Based on Density Functional Theory Calculations [O] . Qing-Lu Liu, Zong-Yan Zhao, Jian-Hong Yi, 2018

机译：基于密度泛函理论计算的短周期（GaAs）m（AlAs）n（mn≤10）超晶格的电子结构和物理性质的高通量研究
7. Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications [O] . Mokerov V.G., Fedorov Yu.V., Hook A.V., 2000

机译：在高频应用中，在成核量子点阈值以下和附近的InAs层厚度下，调制掺杂N-AlGaAs /（InAs / GaAs）/ GaAs超晶格的分子束外延
8. Subband Quantum Scattering Times for ALGAAS/GAAS Obtained Using Digital Filtering [R] . Mena, R. A., Schacham, S. E., Haughland, E. J., 1995

机译：利用数字滤波获得aLGaas / Gaas的子带量子散射时间

Calculation of subband breadth of GaAs/AlGaAs superlattice

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