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Nonideality of Au/Si and Au/GaAs Schottky barriers due to process-induced defects

机译：由于工艺引起的缺陷，导致Au / Si和Au / GaAs肖特基势垒不理想

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摘要

A mechanism of local lowering of the Schottky barrier height (SBH) is proposed, which causes nonideality in nearly ideal Au-Si and Au-GaAs Schottky barriers. Positively ionized defects generated by the process very close to the interface induce electrons in the metal-induced gap states (MIGS) and lower the SBH locally. The spatial density distribution of the ionized defects obtained from the SBH distribution is determined by the unique interaction with the MIGS. The defects are considered to have the negative-U property and are neutralized at very close positions to the MIGS. The potential distributions close to the interface have a considerable potential drop due to the large defect density. These inhomogeneous potentials are coincident with the energy level scheme of the defect identified as the defect causing the nonideality. This defect is Si self-interstitial in Au/Si SB, and As antisite in Au-GaAs SB. This MIGS with process-induced defect model supersedes the previously proposed two major Fermi level pinning models. The mystery of the To effect is solved. The thermionic-field emission current taking place in the strong electric field has influence on the I-V characteristics at low temperatures. Regarding the C-V characteristics of Au/Si SB, the observed extra capacitance under the forward bias is an experimental evidence in accordance with the proposed model. (c) 2005 Elsevier B.V. All rights reserved.
机译：提出了局部降低肖特基势垒高度（SBH）的机制，该机制在几乎理想的Au / n-Si和Au / n-GaAs肖特基势垒中引起不理想。该过程所产生的正离子化缺陷非常靠近界面，它会以金属感应间隙态（MIGS）感应电子，并局部降低SBH。由SBH分布获得的电离缺陷的空间密度分布取决于与MIGS的独特相互作用。缺陷被认为具有负U特性，并且在距MIGS非常近的位置被中和。由于大的缺陷密度，靠近界面的电位分布具有相当大的电位降。这些不均匀的电势与被识别为导致不理想的缺陷的缺陷的能级图一致。该缺陷在Au / Si SB中是Si自填隙的，在Au / n-GaAs SB中是As反位的。这种具有过程引起的缺陷模型的MIGS取代了先前提出的两个主要的费米能级钉扎模型。 To效果的奥秘得以解决。在强电场中发生的热电子场发射电流会影响低温下的I-V特性。关于Au / Si SB的C-V特性，在正向偏压下观察到的额外电容是根据所提出模型的实验证据。 （c）2005 Elsevier B.V.保留所有权利。

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