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Characterization of HfO2 dielectric films with low energy SIMS

机译：低能SIMS表征HfO2介电膜

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摘要

This work investigated optimal conditions for SIMS analyses of HfO2/Si and TiN/HfO2 interfaces as well as nitrogen distributions in HfO2 films. It was demonstrated that SIMS profiling from the back side of wafers was desirable to eliminate artificial tails of Hf+ and Ti+ as often observed during profiling from the front side. The data suggested good thermal stability of the interfaces in this study. Meanwhile, accurate characterization of shallow nitrogen in HfO2 was achieved by using a low energy O-2(+) beam at oblique incidence and detecting (NO-)-N-30 secondary ions. It was revealed that nitrogen was mainly incorporated into the top part of the HfO2 films through plasma nitridation and could be released rapidly during post nitridation anneal at a high temperature. (c) 2006 Elsevier B.V. All rights reserved.
机译：这项工作研究了SIMS分析HfO2 / Si和TiN / HfO2界面以及HfO2膜中氮分布的最佳条件。事实证明，从晶圆背面进行SIMS轮廓分析是消除Hf +和Ti +的人造尾部所需要的，这在从正面进行轮廓分析时经常会看到。数据表明该研究中的界面具有良好的热稳定性。同时，通过使用倾斜入射的低能O-2（+）束并检测（NO-）-N-30次级离子，可以准确表征HfO2中的浅氮。结果表明，氮主要通过等离子体氮化引入HfO2膜的顶部，并且在高温下的氮化后退火过程中会迅速释放。 （c）2006 Elsevier B.V.保留所有权利。

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