• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Quantitative analysis of surface contaminants on silicon wafers by means of TOF-SIMS
【24h】

Quantitative analysis of surface contaminants on silicon wafers by means of TOF-SIMS

机译：借助TOF-SIMS定量分析硅片上的表面污染物

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Measurement of surface metal contamination on silicon wafers is essential for yield enhancement in IC manufacturing. Vapour phase decomposition coupled with either inductively coupled plasma mass spectrometry (VPD-ICP-MS), or total reflection X-ray fluorescence (VPD-TXRF), TXRF and, more recently, TOF-SIMS are used to monitor surface metal contamination. These techniques complement each other in their respective strengths and weaknesses. For reliable and accurate quantification, so-called relative sensitivity factors (RSF) are required for TOF-SIMS analysis. For quantification purposes in VPD, the collection efficiency (CE) is important to ensure complete collection of contamination. A standard procedure has been developed that combines the determination of these RSFs as well as the collection efficiency using all the analytical techniques mentioned above. Therefore, sample wafers were intentionally contaminated and analysed (by TOF-SIMS) directly after preparation. After VPD-ICP-MS, several scanned surfaces were analysed again by TOF-SIMS. Comparing the intensities of the specific metals before and after the VPD-DC procedure on the scanned surface allows the determination of so-called removing efficiency (RE). In general, very good agreement was obtained comparing the analytical techniques after updating the RSFs for TOF-SIMS. Progress has been achieved concerning the CE evaluation as well as determining the RSFs for 16 elements more precisely for TOF-SIMS. (c) 2006 Elsevier B.V. All rights reserved.
机译：硅晶片表面金属污染的测量对于提高IC制造的良率至关重要。汽相分解或电感耦合等离子体质谱（VPD-ICP-MS）或全反射X射线荧光（VPD-TXRF），TXRF和最近的TOF-SIMS用于监测表面金属污染。这些技术在各自的优势和劣势上相互补充。为了可靠，准确地定量，TOF-SIMS分析需要所谓的相对灵敏度因子（RSF）。对于VPD中的量化目的，收集效率（CE）对于确保完全收集污染物很重要。已经开发了一种标准程序，该程序使用上述所有分析技术将这些RSF的确定以及收集效率结合在一起。因此，样品晶片在制备后直接被有意污染和分析（通过TOF-SIMS）。在VPD-ICP-MS之后，通过TOF-SIMS再次分析了几个扫描表面。比较VPD-DC程序在被扫描表面之前和之后的特定金属的强度，可以确定所谓的去除效率（RE）。通常，在更新用于TOF-SIMS的RSF之后，比较分析技术可以获得很好的一致性。在CE评估以及为TOF-SIMS更精确地确定16个元素的RSF方面已取得进展。 （c）2006 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号