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ToF-SIMS depth profiling of (Ga,Mn)As capped with amorphous arsenic: Effects of annealing time

机译:覆盖无定形砷的(Ga,Mn)As的ToF-SIMS深度分析:退火时间的影响

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摘要

The influence of annealing time on an amorphous As cap layer and the depth distribution of Mn atoms have been investigated. The results show that a similar to 1600 angstrom thick As cap layer is completely desorbed after 3 h of annealing time. The depth distributions of Mn indicate that interstitial Mn atoms have diffused to the outer surface and being passivated. The thickness of the Mn passivation layer was around 90 angstrom. (c) 2006 Elsevier B.V. All rights reserved.
机译:研究了退火时间对非晶态As覆盖层和Mn原子深度分布的影响。结果表明,经过3 h的退火时间,大约1600埃厚的As盖层被完全解吸。 Mn的深度分布表明间隙Mn原子已经扩散到外表面并被钝化。 Mn钝化层的厚度约为90埃。 (c)2006 Elsevier B.V.保留所有权利。

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