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Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials

机译:不同的光导增强(OCE)协议可消除半导体和半绝缘材料的超低能耗SIMS剖析期间的充电

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This work shows how the surface potential instabilities observed during uleSIMS profiling of various semiconductor and semi-insulating materials can be overcome by using coincident bombardment with laser light to excite electron-hole pairs. We show that the causes of the problem differ according to the material system, and may sometimes be due to the material alone, or to the interaction between the material and the primary ion beam. In some cases (e.g. Si1-xGex, phosphorus implanted silicon) it is sufficient to irradiate the SIMS crater with a photon flux density above some threshold determined by the primary ion current. In others, the laser irradiation pattern must be tailored so as to create a conducting path from the crater to the sample holder. (c) 2006 Elsevier B.V. All rights reserved.
机译:这项工作表明,通过使用激光同时轰击激发电子-空穴对,可以克服在uleSIMS分析各种半导体和半绝缘材料过程中观察到的表面电势不稳定性。我们显示出问题的原因因材料系统而异,有时可能是由于单独的材料或材料与主离子束之间的相互作用所致。在某些情况下(例如,Si1-xGex,磷注入的硅),以高于由一次离子电流确定的某个阈值的光子通量密度照射SIMS环形山就足够了。在其他情况下,必须定制激光辐照图案,以形成从火山口到样品架的导电路径。 (c)2006 Elsevier B.V.保留所有权利。

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