Back side SIMS analysis of hafnium silicate

Gu C; Stevie FA; Bennett J; Garcia R; GriffiS DP

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Back side SIMS analysis of hafnium silicate

机译：硅酸ha的背面SIMS分析

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摘要

High-k dielectrics are under study as part of the effort to continually reduce semiconductor device dimensions and hafnium silicate (HfSiXOy) is one of the most promising high-k materials. A requirement of the dielectric is that the constituent elements cannot diffuse into adjacent device regions during thermal processing. Analysis for inter-diffusion using front side SIMS of high-k dielectrics has been complicated by matrix and sputtering effects.

机译：作为不断缩小半导体器件尺寸的努力的一部分，正在研究高k电介质，而硅酸ha（HfSiXOy）是最有前途的高k材料之一。电介质的要求是，在热处理期间，组成元素不能扩散到相邻的器件区域中。使用高k电介质的正面SIMS进行的相互扩散分析由于基质和溅射效应而变得复杂。

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来源
《Applied Surface Science》 |2006年第19期|p. 7179-7181|共3页
作者
Gu C; Stevie FA; Bennett J; Garcia R; GriffiS DP;
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作者单位

N Carolina State Univ, Analyt Instrument Facil, Raleigh, NC 27695 USA;

ATDF, Austin, TX 78741 USA;

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收录信息
原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
SIMS; high-k dielectrics; back side analysis; hafnium silicate; ION MASS-SPECTROMETRY; DIELECTRIC FILMS; DEPTH PROFILES; DIFFUSION; BORON;

机译：SIMS;高k电介质;背面分析;硅酸ha;离子质谱;介电膜;深度分布;扩散;硼;

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专利

1. Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks [J] . Heng-Sheng Huang, Piyas Samanta, Tsung-Jian Tzeng, Applied Physics Letters . 2012,第2期

机译：薄硅酸ha和氮化硅酸gate栅电介质叠层中的电子俘获
2. Thermal stability of hafnium-silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy [J] . M. A. Quevedo-Lopez, J. J. Chambers, M. R. Visokay, Applied Physics Letters . 2005,第1期

机译：傅里叶变换红外光谱法研究硅酸ha和等离子体氮化硅酸films薄膜的热稳定性
3. Synthesis and characterisation of Hf(thd)(2)X-2 derivatives [X = N(SiMe3)(2), OSiMe3 and (OSiBuMe2)-Bu-t] as precursors for MOCVD of hafnium silicate films [J] . Hubert-Pfalzgraf LG, Touati N, Pasko SV, Polyhedron: The International Journal for Inorganic and Organometallic Chemistry . 2005,第18期

机译：Hf（thd）（2）X-2衍生物[X = N（SiMe3）（2），OSiMe3和（OSiBuMe2）-Bu-t]的合成和表征，用作硅酸f膜MOCVD的前体
4. 2-bit Poly-Si-TFT Nonvolatile Memory Using Hafnium oxide, Hafnium Silicate and Zirconium silicate [C] . Yu-Hsien Lin, Chao-Hsin Chien, Tung-Hung Chou, International Electron Devices Meeting . 2005

机译：使用氧化铪，硅酸铪和硅酸锆的2位聚-SI-TFT非易失性记忆
5. Process development, characterization, transient relaxation, and reliability study of hafnium oxide and hafnium silicate gate oxide for 45nm technology and beyond. [D] . Akbar, Mohammad Shahariar. 2005

机译：用于45nm及以后工艺的氧化gate和硅酸ha栅氧化物的工艺开发，表征，瞬态松弛和可靠性研究。
6. Microstructure and optical properties of Pr3+-doped hafnium silicate films [O] . YongTao An, Christophe Labbé, Larysa Khomenkova, 2013

机译：掺Pr3 +的硅酸ha薄膜的微观结构和光学性质
7. Some properties of hafnium oxide, hafnium silicate, calcium hafnate and hafnium carbide / [O] . Curtis, C. E., Johnson, J. R., Doney, L. M., 1954

机译：氧化铪，硅酸铪，硫酸钙和碳化铪的一些性质/
8. BIBLIOGRAPHY OF HAFNIUM OXIDE, HAFNIUM SILICATE AND HAFNIUM CARBIDE [R] . C. E. Curtis 1952

机译：氧化铪，硅酸镉和碳化铪的参考文献

Back side SIMS analysis of hafnium silicate

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