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Photoinduced effect in Ga-Ge-S based thin films

机译：Ga-Ge-S基薄膜中的光诱导效应

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Glassy films of Ga10Ge25S65 with 4 mu m thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 mu m (Delta V/V approximate to 30%) is observed for composition Ga10Ge25S65 exposed during 180 min and 3 mW/cm(2) power density. The optical absorption edge measured for the film Ge25Ga10S65 above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (Delta E-g = 440 meV) than Delta E-g induced by above bandgap illumination (Delta E-g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Delta n = -0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented. (c) 2005 Elsevier B.V. All rights reserved.
机译：通过电子束蒸发将厚度为4μm的Ga10Ge25S65玻璃状膜沉积在石英衬底上。研究了光膨胀（PE）（光诱导的体积增加）和光漂白（PB）（带隙的蓝移）效应。暴露区域已使用渗透仪进行了分析，对于在180分钟和3 mW / cm（2）功率密度下暴露的Ga10Ge25S65组成，观察到1.7微米的膨胀（ΔV / V约为30％）。对带隙上方和下方的薄膜Ge25Ga10S65的光学吸收边缘进行的测量显示，带隙下方光子照射引起的间隙的蓝移比由带隙上方照射引起的Delta Eg明显更高（Delta Eg = 440 meV）（Delta Eg = 190） meV）。折射率分布的分布显示出在被辐照样品中折射率的负变化（Δn = -0.6）。使用扫描电子显微镜（SEM）检查形态。使用能量色散分析仪（EDX）测得的化学成分表明，进入照射区域的氧原子增加了。使用劳埃德的反射镜装置进行连续波全息照相，可以使用发生在其中的光致效应来记录全息光栅。所记录的光栅的衍射效率高达25％，并提供了原子力显微镜图像。 （c）2005 Elsevier B.V.保留所有权利。

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