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Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

机译：反应磁控溅射从InN氧化In2O3的光学性质

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I Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In2O3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, similar to 1.8-1.9 eV After the annealing process at 500 degrees C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In2O3:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively. (c) 2005 Elsevier B.V. All rights reserved.
机译：通过射频反应磁控溅射在（0 0 0 1）蓝宝石衬底上无意掺杂锌掺杂的氮化铟（U-InN和InN：Zn）膜，然后对所有样品进行退火处理以形成In2O3膜。 U-InN和InN：Zn膜具有相似的光子吸收特性。沉积的U-InN和InN：Zn薄膜显示出吸收边缘，类似于1.8-1.9 eV。在500摄氏度下退火20分钟后，可见光范围的吸收系数明显降低，吸收边缘为约3.5 eV。在In2O3：Zn薄膜的20 K光致发光（PL）光谱中，在3.342 eV（371 nm）和3.238 eV（383 nm）处的两个发射峰被确定为自由激发（FE）或近谱带（ BB）和导带对受体（CA）重组。 （c）2005 Elsevier B.V.保留所有权利。

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