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首页> 外文期刊>Applied Surface Science >Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition
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Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

机译：通过原子层沉积在TiN / Si衬底上生长的La2O3薄膜的电性能

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摘要

The electrical as well as the structural properties of La2O3 thin films on TiN substrates were investigated. Amorphous stoichiometric La2O3 thin films were grown at 300 degrees C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD)(3)] and H2O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La2O3 film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La2O3 thin films increased with annealing temperature to reach the value of 17.3 at 500 degrees C. The leakage current density of the film post-annealed at 400 degrees C was estimated to be 2.78 x 10(-10) and 2.1 x 10(-8) A/cm(2) at 1 V, respectively. (c) 2005 Elsevier B.V All rights reserved.
机译：研究了TiN衬底上La2O3薄膜的电学和结构性能。以2,2,6,6-四甲基-3,5-庚二酮镧[La（TMHD）（3）]和H2O为前驱体，通过原子层沉积技术在300°C下生长了非晶态化学计量的La2O3薄膜。生长膜的后退火引起结构和电性能的显着变化。 La2O3薄膜的晶相随后退火温度的升高而出现。制造金属-绝缘体-金属（MIM）电容器以测量生长的薄膜的电性能。 La2O3薄膜的介电常数随退火温度的升高在500摄氏度时达到17.3的值。在400摄氏度后退火的薄膜的漏电流密度估计为2.78 x 10（-10）和2.1在1 V下分别为x 10（-8）A / cm（2）。 （c）2005 Elsevier B.V保留所有权利。

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