• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering
【24h】

Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

机译：射频溅射制备铟锡氧氮化物薄膜期间的发射光谱

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N-2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N-2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure. (c) 2006 Published by Elsevier B.V.
机译：分别使用Ar等离子体和N-2等离子体，并通过不同的rf功率，通过从ITO靶进行rf溅射，在玻璃上沉积了氧化铟锡（ITO）和氧氮化铟锡（ITON）膜。使用光发射光谱法（OES）来识别等离子体中存在的物质，并将其与ITO和ITON薄膜的特性相关联。离子In的发射线只能在N-2等离子体中检测到，而在Ar等离子体中，可以检测到与原子In和InO相对应的附加线。薄膜的沉积速率与In物种而不是氮物种与等离子体中的发射强度相关。与ITO膜的各个特性相比，ITON膜的更高的电阻率和更低的载流子浓度归因于在ITON结构中掺入了氮而不是氧。 （c）2006年由Elsevier B.V.发布

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号